VS-70MT060WHTAPBF Vishay Semiconductors, VS-70MT060WHTAPBF Datasheet - Page 5
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VS-70MT060WHTAPBF
Manufacturer Part Number
VS-70MT060WHTAPBF
Description
IGBT Modules 600 Volt 70 Amp Warp2 Speed IGBT
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-70MT060WHTAPBF.pdf
(9 pages)
Specifications of VS-70MT060WHTAPBF
Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
100 A
Maximum Operating Temperature
+ 150 C
Package / Case
MTP
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Factory Pack Quantity
105
94469_07
94469_09
Revision: 05-Jul-11
94469_08
1400
1200
1000
1000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
800
600
400
200
100
4.5
4.0
3.5
3.0
2.5
10
Fig. 8 - Typical Energy Losses vs. I
0
0.1
0
0
Fig. 7 - Typical Gate Threshold Voltage
I
I
C
C
- Collector to Emitter Current (A)
- Collector to Emitter Current (A)
www.vishay.com
Fig. 9 - Switching Time vs. I
t
f
20
20
E
on
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
25 °C
t
r
E
I
C
off
(mA)
40
40
125 °C
t
d(off)
t
d(on)
60
60
C
( T
For technical questions, contact:
C
J
= 150 °C)
1.0
80
80
5
indmodules@vishay.com
94469_10
94469_11
94469_12
350
300
250
200
150
100
160
140
120
100
Fig. 12 - Typical Reverse Recovery Current vs. dI
50
40
35
30
25
20
15
10
80
60
Fig. 11 - Typical Reverse Recovery Time vs. dI
0
5
100
100
0
www.vishay.com/doc?91000
V
Fig. 10 - Reverse BIAS SOA, T
R
I
= 200 V
C
100
- Collector to Emitter Voltage (V)
200
I
F
Vishay Semiconductors
= 70 A, 125 °C
70MT060WHTAPbF
dI
dI
300
F
F
/dt (A/µs)
/dt (A/μs)
I
F
I
400
F
= 70 A, 25 °C
I
= 70 A, 125 °C
F
= 70 A, 25 °C
Document Number: 94469
500
J
V
= 150 °C
R
= 200 V
600
1000
1000
700
F
/dt
F
/dt