IRGS4045DPBF International Rectifier, IRGS4045DPBF Datasheet - Page 4

• Manufacturer Part Number: IRGS4045DPBF
• Description: IGBT Transistors IR IGBT 600V 6A, COPAK-D2PAK
• Manufacturer: International Rectifier

Specifications of IRGS4045DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 6 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Package / Case: D2PAK
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

20
15
10
10
10
5
0
8
6
4
2
0
8
6
4
2
0
Fig. 7 - Typ. IGBT Output Characteristics
0
5
5
Fig. 9 - Typical V
Fig. 11 - Typical V
2
T
J
= 175°C; tp = 80μs
10
10
T
T
J
4
J
= -40°C
V CE (V)
V GE (V)
V GE (V)
= 175°C
CE
6
I CE = 3.0A
I CE = 6.0A
I CE = 12A
Top
Bottom
CE
15
15
vs. V
I CE = 3.0A
I CE = 6.0A
I CE = 12A
vs. V
V
V
V
V
V
GE
GE
GE
GE
GE
8
GE
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
10
20
20
20
18
16
14
12
10
20
18
16
14
12
10
10
8
6
4
2
0
8
6
4
2
0
8
6
4
2
0
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 12 - Typ. Transfer Characteristics
0.0
4
5
Fig. 10 - Typical V
V GE, Gate-to-Emitter Voltage (V)
6
T J = 175°C
V
T J = 25°C
CE
175°C
-40°C
25°C
1.0
10
= 50V; tp = 10μs
8
T
J
V GE (V)
tp = 80μs
V F (V)
= 25°C
10
I CE = 3.0A
I CE = 6.0A
I CE = 12A
CE
2.0
15
12
vs. V
14
GE
3.0
20
16