NGTB25N120LWG ON Semiconductor, NGTB25N120LWG Datasheet - Page 4

• Manufacturer Part Number: NGTB25N120LWG
• Description: IGBT Transistors 1200/25A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB25N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

1000
1000
100
100
16
14
12
10
10
10
8
6
4
2
0
1
1
8
0
0
V
V
I
Rg = 10 W
C
V
V
T
Rg = 10 W
CE
GE
Figure 9. Switching Time vs. Temperature
12
J
= 25 A
t
CE
GE
d(off)
20
t
= 150°C
f
= 600 V
= 15 V
t
= 600 V
= 15 V
d(on)
16
Figure 11. Switching Time vs. I
T
50
Figure 7. Typical Gate Charge
t
r
J
, JUNCTION TEMPERATURE (°C)
I
C
40
, COLLECTOR CURRENT (A)
20
Q
t
r
G
t
d(off)
, GATE CHARGE (nC)
24
60
100
28
400 V
80
32
150
100
200 V
36
TYPICAL CHARACTERISTICS
40
120
600 V
t
200
d(on)
C
44 48
140
t
http://onsemi.com
f
250
160
52
4
4.5
3.5
2.5
1.5
0.5
10
10
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
8
0
5
V
V
I
Rg = 10 W
C
V
V
T
Rg = 10 W
V
V
I
T
CE
GE
C
= 25 A
J
J
CE
GE
12
CE
GE
Figure 8. Energy Loss vs. Temperature
= 25 A
= 150°C
= 150°C
20
15
= 600 V
= 15 V
= 600 V
= 15 V
= 600 V
= 15 V
16
T
Figure 12. Energy Loss vs. Rg
Figure 10. Energy Loss vs. I
J
, JUNCTION TEMPERATURE (°C)
I
C
25
40
, COLLECTOR CURRENT (A)
20
Rg, GATE RESISTOR (W)
24
35
60
28 32
45
80
E
E
E
on
off
100
E
55
on
off
36 40
E
E
on
off
120
65
C
44
140
75
48 52
160
85