NGTG15N60S1EG ON Semiconductor, NGTG15N60S1EG Datasheet
NGTG15N60S1EG
Specifications of NGTG15N60S1EG
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NGTG15N60S1EG Summary of contents
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... 117 −55 to °C J +150 T −55 to °C stg +150 T 260 °C SLD NGTG15N60S1EG 1 http://onsemi.com 15 A, 600 1.5 V CEsat TO−220 CASE 221A G STYLE MARKING DIAGRAM G15N60S1G AYWW A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ...
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THERMAL CHARACTERISTICS Rating Thermal resistance junction to case, for IGBT Thermal resistance junction to ambient ELECTRICAL CHARACTERISTICS Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited Gate leakage current, collector−emitter ...
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T = 25° COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics ...
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V CES GATE CHARGE (nC) G Figure 7. Typical Gate Charge 1000 100 400 ...
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R , GATE RESISTOR (W) G Figure 13. Switching Time vs. R 1000 100 10 1 175 225 275 325 375 425 ...
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Duty Cycle 20% 10% 0 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics TYPICAL CHARACTERISTICS R R Junction ...
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Figure 20. Definition of Turn On Waveform http://onsemi.com 7 ...
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Figure 21. Definition of Turn Off Waveform http://onsemi.com 8 ...
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... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...