NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet - Page 4
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NGB8206ANSL3G
Manufacturer Part Number
NGB8206ANSL3G
Description
IGBT Transistors IGBT 20A 350V N-CHANNEL
Manufacturer
ON Semiconductor
Datasheet
1.NGB8206ANSL3G.pdf
(8 pages)
Specifications of NGB8206ANSL3G
Rohs
yes
Collector- Emitter Voltage Vceo Max
390 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current At 25 C
20 A
Gate-emitter Leakage Current
350 uA
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
Characteristic
Symbol
t
t
t
d(off)
d(off)
d(on)
t
t
t
r
f
f
V
R
V
R
V
R
http://onsemi.com
CC
G
CC
CC
G
G
Test Conditions
= 1.0 kW, R
= 1.0 kW, R
= 1.0 kW, L = 300
= 14 V, I
= 300 V, I
= 300 V, I
V
V
V
GE
GE
GE
mH
W
W
A
A
= 5 V
= 5 V
= 5 V
4
C
C
C
= 9.0 A
L
L
= 9.0
= 9.0
= 1.5
= 33
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
= 175°C
= 175°C
= 175°C
= 175°C
= 175°C
= 175°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Min
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
10.5
Typ
8.0
8.0
6.0
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
Max
8.0
7.0
9.0
4.5
2.0
2.0
8.0
7.0
10
10
14
10
mSec
Unit