NGTB20N120LWG ON Semiconductor, NGTB20N120LWG Datasheet - Page 5
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NGTB20N120LWG
Manufacturer Part Number
NGTB20N120LWG
Description
IGBT Transistors 1200V/20A IGBT FSI TO-247
Manufacturer
ON Semiconductor
Datasheet
1.NGTB20N120LWG.pdf
(9 pages)
Specifications of NGTB20N120LWG
Rohs
yes
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
40 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
77 W
Package / Case
TO-247
Mounting Style
Through Hole
10,000
1000
1000
100
100
10
10
1
1
5
375
V
I
R
T
C
J
GE
G
425
15
= 20 A
V
= 150°C
= 10 W
CE
Figure 15. Switching Time vs. V
= 15 V
Figure 13. Switching Time vs. R
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
R
G
, GATE RESISTOR (W)
525
35
1000
100
575
45
10
1
1
V
Figure 17. Reverse Bias Safe Operating Area
GE
625
55
t
t
= 15 V, T
d(off)
d(on)
V
t
t
f
r
CE
t
TYPICAL CHARACTERISTICS
t
d(off)
d(on)
675
65
, COLLECTOR−EMITTER VOLTAGE (V)
V
V
I
T
t
t
C
f
r
J
CE
GE
= 20 A
= 150°C
CE
C
10
G
= 600 V
= 15 V
= 125°C
725
75
http://onsemi.com
775
85
5
100
1000
0.01
100
0.1
10
1
7
6
5
4
3
2
1
0
1
375
V
I
R
T
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
GE
J
G
= 20 A
= 150°C
= 10 W
425
V
V
= 15 V
CE
CE
1000
dc operation
C
Figure 14. Energy Loss vs. V
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
10
525
1 ms
575
100
625
50 ms
100 ms
675
CE
E
E
on
off
1000
725
775