IRGP4660DPBF International Rectifier, IRGP4660DPBF Datasheet - Page 5
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IRGP4660DPBF
Manufacturer Part Number
IRGP4660DPBF
Description
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Manufacturer
International Rectifier
Datasheet
1.IRGP4650DPBF.pdf
(12 pages)
Specifications of IRGP4660DPBF
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
70 uA
Power Dissipation
134 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247
Continuous Collector Current Ic Max
76 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGP4660DPBF
Manufacturer:
IR
Quantity:
20 000
T
J
= 175°C; L = 210μH; V
T
J
= 175°C; L = 200μH; V
4000
3500
3000
2500
2000
1500
1000
3000
2500
2000
1500
1000
500
500
35
30
25
20
15
10
0
Fig. 15 - Typ. Energy Loss vs. R
10
0
0
Fig. 17 - Typ. Diode I
Fig. 13 - Typ. Energy Loss vs. I
R G = 47
R G = 100
R G = 22
10
20
R G = 10
25
T
20
J
30
CE
= 175°C
CE
= 400V, I
30
= 400V, R
Rg ()
I C (A)
I F (A)
50
40
E ON
40
E ON
RR
50
CE
G
vs. I
50
= 10; V
75
= 35A; V
E OFF
E OFF
F
60
C
60
G
GE
100
70
GE
70
= 15V
= 15V
T
J
T
= 175°C; L = 210μH; V
J
= 175°C; L = 200μH; V
1000
1000
100
100
10
10
26
24
22
20
18
16
14
Fig. 16 - Typ. Switching Time vs. R
Fig. 14 - Typ. Switching Time vs. I
Fig. 18 - Typ. Diode I
0
0
0
td ON
td ON
t F
td OFF
10
t R
t F
td OFF
10
20
t R
T
20
J
CE
CE
= 175°C
20
40
= 400V, R
= 400V, I
30
R G ()
R G (
I C (A)
40
RR
30
60
G
CE
vs. R
50
= 10; V
= 35A; V
40
80
G
60
C
G
GE
100
70
50
GE
= 15V
= 15V