IRGP4660D-EPBF International Rectifier, IRGP4660D-EPBF Datasheet - Page 4
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IRGP4660D-EPBF
Manufacturer Part Number
IRGP4660D-EPBF
Description
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Manufacturer
International Rectifier
Datasheet
1.IRGP4650DPBF.pdf
(12 pages)
Specifications of IRGP4660D-EPBF
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
70 uA
Power Dissipation
134 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247
Continuous Collector Current Ic Max
76 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Available stocks
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Fig. 7 - Typ. IGBT Output Characteristics
140
120
100
20
18
16
14
12
10
80
60
40
20
20
18
16
14
12
10
8
6
4
2
0
0
8
6
4
2
0
5
0
5
Fig. 11 - Typical V
Fig. 9 - Typical V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
T
J
= 175°C; tp =
2
T
T
J
J
10
10
= 175°C
= -40°C
4
V GE (V)
V CE (V)
V GE (V)
CE
CE
I CE = 18A
I CE = 35A
I CE = 70A
60μs
vs. V
6
vs. V
I CE = 18A
I CE = 35A
I CE = 70A
15
15
GE
GE
8
20
20
10
Fig. 8 - Typ. Diode Forward Characteristics
140
120
100
140
120
100
Fig. 12 - Typ. Transfer Characteristics
80
60
40
20
20
18
16
14
12
10
80
60
40
20
0
8
6
4
2
0
0
0.0
5
4
Fig. 10 - Typical V
5
V
V GE, Gate-to-Emitter Voltage (V)
175°C
CE
-40°C
25°C
6
1.0
= 50V; tp = 60μs
7
tp = 80μs
10
T
J
8
V GE (V)
= 25°C
V F (V)
2.0
T J = 25°C
9
I CE = 18A
I CE = 35A
I CE = 70A
10 11 12 13 14
CE
15
vs. V
T J = 175°C
3.0
GE
4.0
20