ES2G-E3/2CT Vishay Semiconductors, ES2G-E3/2CT Datasheet - Page 2

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ES2G-E3/2CT

Manufacturer Part Number
ES2G-E3/2CT
Description
Rectifiers 2.0 Amp 400V 35ns
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of ES2G-E3/2CT

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.1 V
Recovery Time
35 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
SMB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
750
Note
(1)
Note
(1)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
Revision: 07-Feb-12
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current at V
Maximum reverse recovery time
Maximum reverse recovery time
Maximum reverse recovery current
Maximum stored charge
Typical junction capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Maximum thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
ES2G-E3/52T
ES2G-E3/5BT
ES2GHE3/52T
ES2GHE3/5BT
A
AEC-Q101 qualified
Pulse test: 300 μs pulse width, 1 % duty cycle
Units mounted on P.C.B. 5.0 mm x 5.0 mm (0.013 mm thick) land areas
= 25 °C unless otherwise noted)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
3.0
2.0
1.0
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0
Fig. 1 - Maximum Forward Current Derating Curve
80
90
(1)
(1)
www.vishay.com
100
Lead Temperature (°C)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
UNIT WEIGHT (g)
110
Resistive or Inductive Load
RRM
0.096
0.096
0.096
0.096
120
130
2.0 A
I
I
I
V
I
V
I
V
4.0 V, 1 MHz
F
rr
F
F
F
140
R
R
R
A
= 1.0 A, dI/dt = 100 A/μs,
= 1.0 A, dI/dt = 100 A/μs,
= 1.0 A, dI/dt = 100 A/μs,
PREFERRED PACKAGE CODE
= 0.5 A, I
= 0.25 A
= 30 V, I
= 30 V, I
= 30 V, I
= 25 °C unless otherwise noted)
TEST CONDITIONS
A
150
= 25 °C unless otherwise noted)
R
rr
rr
rr
= 1.0 A,
= 0.1 I
= 0.1 I
= 0.1 I
T
T
5BT
5BT
52T
52T
A
A
= 25 °C
= 100 °C
RM
RM
RM
2
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
SYMBOL
SYMBOL
R
R
V
JA
JL
I
Q
C
F
RM
60
50
40
30
20
10
I
t
t
R
rr
rr
0
rr
J
(1)
(1)
(1)
1
BASE QUANTITY
www.vishay.com/doc?91000
Vishay General Semiconductor
3200
3200
750
750
Number of Cycles at 60 Hz
ES2F
ES2F
8.3 ms Single Half Sine-Wave
at T
13" diameter plastic tape and reel
13" diameter plastic tape and reel
DiodesEurope@vishay.com
7" diameter plastic tape and reel
7" diameter plastic tape and reel
10
200
1.1
3.0
L
10
35
50
50
15
75
25
= 110 °C
DELIVERY MODE
Document Number: 88588
ES2G
ES2G
ES2F, ES2G
100
UNIT
UNIT
°C/W
µA
nC
pF
ns
ns
V
A

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