VS-HFA08TB120STRRP Vishay Semiconductors, VS-HFA08TB120STRRP Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/698/vishay_semiconductors_sml.jpg)
VS-HFA08TB120STRRP
Manufacturer Part Number
VS-HFA08TB120STRRP
Description
Rectifiers 1200 Volt 8.0 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-HFA08TB120STRLP.pdf
(8 pages)
Specifications of VS-HFA08TB120STRRP
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.3 V
Recovery Time
95 ns
Forward Continuous Current
8 A
Max Surge Current
130 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
800
Revision: 27-Aug-12
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
DYNAMIC RECOVERY CHARACTERISTICS (T
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of
recovery current during t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
dI
dI
SYMBOL
SYMBOL
SYMBOL
(rec)M
(rec)M
I
I
R
R
T
RRM1
RRM2
V
Q
Q
V
I
t
t
C
RM
L
t
lead
thJC
thJA
rr1
rr2
FM
BR
rr
rr1
rr2
S
T
/dt1
/dt2
J
I
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
I
T
T
T
T
T
T
T
T
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Case style D
F
R
F
F
F
J
J
J
J
J
J
J
J
J
R
R
= 25 °C unless otherwise specified)
= 8.0 A
= 16 A
= 8.0 A, T
= 1.0 A, dI
= 100 μA
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C, V
= V
= 200 V
R
rated
J
F
2
TEST CONDITIONS
TEST CONDITIONS
= 125 °C
/dt = 200 A/μs, V
TEST CONDITIONS
PAK
R
J
= 0.8 x V
= 25 °C unless otherwise specified)
2
R
I
dI
V
F
rated
R
F
= 8.0 A
/dt = 200 A/μs
= 200 V
R
= 30 V
www.vishay.com/doc?91000
VS-HFA08TB120SPbF
Vishay Semiconductors
MIN.
1200
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DiodesEurope@vishay.com
TYP.
TYP.
TYP.
0.31
0.07
HFA08TB120S
135
106
140
335
133
2.6
3.4
2.4
8.0
4.5
6.2
2.0
11
28
63
85
-
-
-
-
Document Number: 94046
MAX.
MAX.
MAX.
1000
160
380
880
300
3.3
4.3
3.1
8.0
1.7
10
20
95
11
40
-
-
-
-
-
-
-
UNITS
UNITS
UNITS
A/μs
K/W
nH
nC
oz.
μA
pF
°C
ns
A
V
g