VS-HFA08TB120STRRP Vishay Semiconductors, VS-HFA08TB120STRRP Datasheet - Page 2

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VS-HFA08TB120STRRP

Manufacturer Part Number
VS-HFA08TB120STRRP
Description
Rectifiers 1200 Volt 8.0 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-HFA08TB120STRRP

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
3.3 V
Recovery Time
95 ns
Forward Continuous Current
8 A
Max Surge Current
130 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
800
Revision: 27-Aug-12
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse 
leakage current
Junction capacitance
Series inductance
DYNAMIC RECOVERY CHARACTERISTICS (T
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of
recovery current during t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
dI
dI
SYMBOL
SYMBOL
SYMBOL
(rec)M
(rec)M
I
I
R
R
T
RRM1
RRM2
V
Q
Q
V
I
t
t
C
RM
L
t
lead
thJC
thJA
rr1
rr2
FM
BR
rr
rr1
rr2
S
T
/dt1
/dt2
J
I
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
I
T
T
T
T
T
T
T
T
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Case style D
F
R
F
F
F
J
J
J
J
J
J
J
J
J
R
R
= 25 °C unless otherwise specified)
= 8.0 A
= 16 A
= 8.0 A, T
= 1.0 A, dI
= 100 μA
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C, V
= V
= 200 V
R
rated
J
F
2
TEST CONDITIONS
TEST CONDITIONS
= 125 °C
/dt = 200 A/μs, V
TEST CONDITIONS
PAK
R
J
= 0.8 x V
= 25 °C unless otherwise specified)
2
R
I
dI
V
F
rated
R
F
= 8.0 A
/dt = 200 A/μs
= 200 V
R
= 30 V
www.vishay.com/doc?91000
VS-HFA08TB120SPbF
Vishay Semiconductors
MIN.
1200
MIN.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DiodesEurope@vishay.com
TYP.
TYP.
TYP.
0.31
0.07
HFA08TB120S
135
106
140
335
133
2.6
3.4
2.4
8.0
4.5
6.2
2.0
11
28
63
85
-
-
-
-
Document Number: 94046
MAX.
MAX.
MAX.
1000
160
380
880
300
3.3
4.3
3.1
8.0
1.7
10
20
95
11
40
-
-
-
-
-
-
-
UNITS
UNITS
UNITS
A/μs
K/W
nH
nC
oz.
μA
pF
°C
ns
A
V
g

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