VS-8ETX06PBF Vishay Semiconductors, VS-8ETX06PBF Datasheet

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VS-8ETX06PBF

Manufacturer Part Number
VS-8ETX06PBF
Description
Rectifiers 600 Volt 8.0 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-8ETX06PBF

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
3 V
Recovery Time
24 ns
Forward Continuous Current
8 A
Max Surge Current
110 A
Reverse Current Ir
50 uA
Mounting Style
Through Hole
Package / Case
TO-220AC
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
50

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-8ETX06PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
VS-8ETX06PBF
Quantity:
70 000
Revision: 02-Jan-12
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
Cathode
V -8ETX06P F
V -8ETX06-N
TO-220AC
Package
T
t
V
rr
cathode
J
1
I
F
F(AV)
Ba e
V
(typ.)
max.
at I
R
VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3
www.vishay.com
2
F
Anode
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
V
V
C
Hyperfast Rectifier, 8 A FRED Pt
V
L
I
BR
R
R
F
S
T
,
V -8ETX06FPP F
V -8ETX06FP-N
TO-220 FULL-PAK
Cathode
TO-220AC, TO-220FP
FULL-PAK
1
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
Single die
R
F
F
J
R
R
175 °C
= 8 A
= 8 A, T
= 100 μA
600 V
15 ns
3.0 V
= 150 °C, V
= V
= 600 V
8 A
J
Anode
R
= 25 °C unless otherwise specified)
rated
3
J
SYMBOL
= 150 °C
T
V
I
J
I
TEST CONDITIONS
F(AV)
I
, T
FSM
RRM
R
FM
= V
Stg
R
rated
T
T
T
1
C
C
J
TEST CONDITIONS
= 25 °C
= 143 °C
= 106 °C
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
(-N3 only)
www.vishay.com/doc?91000
MIN.
600
-
-
-
-
-
-
Vishay Semiconductors
- 65 to 175
®
VALUES
INS
DiodesEurope@vishay.com
600
110
18
8
= 2500 V
TYP.
2.3
1.4
0.3
8.0
35
17
-
Document Number: 94032
RMS
MAX.
500
3.0
1.7
50
)
-
-
-
UNITS
°C
V
A
UNITS
nH
μA
pF
V

Related parts for VS-8ETX06PBF

VS-8ETX06PBF Summary of contents

Page 1

... VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Hyperfast Rectifier FRED Pt TO-220AC TO-220 FULL-PAK Ba e cathode Cathode Anode Cathode V -8ETX06P F V -8ETX06FPP F V -8ETX06-N V -8ETX06FP-N PRODUCT SUMMARY Package TO-220AC, TO-220FP I F(AV (typ max. J Diode variation ABSOLUTE MAXIMUM RATINGS ...

Page 2

... VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q rr Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage ...

Page 3

... VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com 1000 100 Fig Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 Fig Maximum Thermal Impedance 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 Fig Maximum Thermal Impedance Z Revision: 02-Jan-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE ...

Page 4

... VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com 180 170 160 DC 150 Square wave (D = 0.50) Rated V applied R 140 130 See note (1) 120 (A) Average Forward Current F(AV) Fig Maximum Allowable Case Temperature vs. Average Forward Current 180 160 140 DC 120 Square wave (D = 0.50) 100 Rated V applied ...

Page 5

... VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com (1) dI /dt - rate of change of current F through zero cro ing ( peak rever e recovery current RRM ( rever e recovery time mea ured rr from zero cro ing point of negative going I to point where a line pa ing F through 0.75 I extrapolated to zero current. ...

Page 6

... VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com ORDERING INFORMATION TABLE Device code VS ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R VS-8ETX06PbF 50 VS-8ETX06-N3 50 VS-8ETX06FPPbF 50 VS-8ETX06FP-N3 50 Dimensions Part marking information Part marking information Revision: 02-Jan-12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE ...

Page 7

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3.4 Hole Ø 3.1 2.8 2.6 10° 0.9 0.61 0.7 0.38 2.54 TYP. 2.85 2.65 Lead assignments Diodes Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK 1 www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors 1.15 TYP. 1.4 1.05 1.3 Document Number: 95005 DiodesEurope@vishay.com ...

Page 8

... H1 0.068 L 0.068 4 L1 0.024 L3 0.022 4 L4 0.600 3 Ø P 0.355 Q  0.507 6 0.414 3, 6 Outline Dimensions Vishay Semiconductors Thermal pad D2 ( Detail B Lead tip E1 (6) Lead assignments Diodes Cathode 3 - Anode Conforms to JEDEC outline TO-220AC MILLIMETERS INCHES MIN. MAX. ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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