M58BW16FB5T3T NUMONYX, M58BW16FB5T3T Datasheet - Page 46

• Manufacturer Part Number: M58BW16FB5T3T
• Description: IC FLASH 16MBIT 55NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW16FB5T3T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.3 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: M58BW16FB5T3TCT

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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 16: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 16.
Figure 5.
1. V
Figure 6.
Supply voltage (V
Input/output supply voltage (V
Ambient temperature (T
Load capacitance (C
Clock rise and fall times
Input rise and fall times
Input pulses voltages
Input and output timing ref. voltages
DD
= V
DDQ
Operating and AC measurement conditions
AC measurement input/output waveform
AC measurement load circuit
.
DD
Parameter
)
L
)
A
V DDQIN
)
V DDQ
C L includes JIG capacitance
0 V
DEVICE
UNDER
DDQ
TEST
)
Grade 3
conditions. Designers should check that the
Min
–40
2.7
2.4
C L
0 to V
V
45 ns
M58BW16F, M58BW32F
DDQ
30
DDQ
/2
Max
125
3.6
3.6
3
3
OUT
V DDQIN /2
V DDQ /2
AI04153
AI04154b
Min
–40
2.5
2.4
0 to V
V
55 ns
DDQ
30
DDQ
/2
Max
125
3.3
3.6
3
3
Units
°C
pF
ns
ns
V
V
V
V