MR2A16ACYS35 EverSpin Technologies Inc, MR2A16ACYS35 Datasheet - Page 4

• Manufacturer Part Number: MR2A16ACYS35
• Description: IC MRAM 4MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR2A16ACYS35

• Memory Size: 4M (256K x 16)
• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Memory Configuration: 256K X 16
• Access Time: 35ns
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 819-1011; MR2A16ACYS35

Electrical Specifications
4
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Operating temperature
NOTES:
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Maximum magnetic field during read or standby
NOTES:
Supply voltage
Voltage on any pin
Output current per pin
Package power dissipation
Temperature under bias
Storage temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
1
2
3
1
2
3
After power up or if V
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if V
falls below minimum V
V
V
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
All voltages are referenced to V
Power dissipation capability depends on package characteristics and use environment.
IH
IL
(min) = –0.5 Vdc; V
(max) = V
2
Parameter
DD
2
+ 0.3 Vdc; V
MR0A16A Advanced Information Data Sheet, Rev. 0
Parameter
DD
WI
IL
3
.
falls below V
(min) = –2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
Table 3. Absolute Maximum Ratings
IH
Table 4. Operating Conditions
(max) = V
SS
.
WI
, a waiting period of 2 ms must be observed, and E and W
DD
+ 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
Symbol
V
V
V
V
T
DD
WI
IH
IL
A
H
H
–0.5
Symbol
3.0
Min
-40
-40
2.5
2.2
max_write
max_read
T
0
T
V
I
T
V
P
Lead
Out
Bias
1
DD
stg
3
In
D
1
Typ
3.3
2.7
—
—
–0.5 to V
–0.5 to 4.0
–45 to 110
–55 to 150
–10 to 85
–45 to 95
Freescale Semiconductor
Value
0.600
±20
260
100
100
100
15
25
25
DD
V
Max
3.0
0.3
105
3.6
DD
0.8
70
85
+ 0.5
DD
1
2
+
Unit
Unit
mA
Oe
Oe
˚C
˚C
˚C
˚C
W
V
V
V
V
V
V