MR2A08ACYS35 EverSpin Technologies Inc, MR2A08ACYS35 Datasheet - Page 6

• Manufacturer Part Number: MR2A08ACYS35
• Description: IC MRAM 4MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR2A08ACYS35

• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Memory Size: 4M (512K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 819-1003

Everspin Technologies © 2009
Electrical Specifications
1
Parameter
Input leakage current
Output leakage current
Output low voltage
Output high voltage
Parameter
AC active supply current - read modes
AC active supply current - write modes
AC standby current
CMOS standby current
All active current measurements are measured with one address transition per cycle and at minimum cycle time.
(I
(I
(I
(I
(I
(V
MR2A08A (Commercial)
MR2A08AC (Industrial)
MR2A08AM (Automotive)
(V
no other restrictions on other inputs
(E ≥ V
(V
OL
OL
OL
OL
OUT
DD
DD
DD
= +4 mA)
= +100 μA)
= -4 mA)
= -100 μA)
= 0 mA, V
= max)
= max, E = V
= max, f = 0 MHz)
DD
- 0.2 V and V
DD
= max)
IH
)
In
≤
V
SS
+ 0.2 V or ≥ V
Table 2.4 Power Supply Characteristics
Symbol
I
I
V
V
lkg(I)
lkg(O)
Table 2.3 DC Characteristics
1
OL
OH
1
DD
- 0.2 V)
Min
-
-
-
2.4
V
DD
6
- 0.2
Symbol
I
I
I
I
DDR
DDW
SB1
SB2
Document Number: MR2A08A Rev. 4, 7/2009
Typical
-
-
-
-
Typical
30
50
50
50
13
8
Max
±1
±1
0.4
V
-
Max
66
135
135
135
20
10
SS
MR2A08A
+ 0.2
Unit
μA
μA
V
V
Unit
mA
mA
mA
mA