VS-SD700C45L Vishay Semiconductors, VS-SD700C45L Datasheet - Page 2

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VS-SD700C45L

Manufacturer Part Number
VS-SD700C45L
Description
Rectifiers 4500 Volt 700 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-SD700C45L

Product Category
Rectifiers
Rohs
yes
Product
Standard Recovery Rectifiers
Configuration
Single
Reverse Voltage
4500 V
Forward Voltage Drop
1.66 V
Forward Continuous Current
700 A
Max Surge Current
7850 A
Reverse Current Ir
50000 uA
Mounting Style
Screw
Package / Case
DO-200AB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
3
SD700C..L Series
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
2
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
CONDUCTION ANGLE
thJ-hs
180°
120°
2
2
90°
60°
30°
t for fusing
t for fusing
CONDUCTION
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.011
0.014
0.018
0.026
0.045
For technical questions, contact: ind-modules@vishay.com
SYMBOL
SYMBOL
V
V
I
R
I
F(RMS)
I
T
F(AV)
F(TO)1
F(TO)2
V
I
thJ-hs
FSM
T
I
2
r
r
Stg
2
FM
f1
f2
t
J
t
DOUBLE SIDE
(Hockey PUK Version), 700 A
Standard Recovery Diodes
0.011
0.015
0.018
0.026
0.046
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
pk
= 1000 A, T
F(AV)
F(AV)
thJ-hs
RECTANGULAR CONDUCTION
), T
), T
SINGLE SIDE
when devices operate at different conduction angles than DC
F(AV)
F(AV)
J
= T
J
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
0.008
0.014
0.019
0.027
0.046
= T
= T
TEST CONDITIONS
TEST CONDITIONS
J
< I <  x I
< I <  x I
maximum, t
J
J
maximum
maximum
RRM
RRM
F(AV)
F(AV)
DOUBLE SIDE
p
Sinusoidal half wave,
initial T
), T
), T
= 10 ms sinusoidal wave
0.008
0.014
0.019
0.028
0.046
J
J
= T
= T
J
= T
J
J
maximum
maximum
J
maximum
TEST CONDITIONS
T
J
= T
J
maximum
- 40 to 150
- 55 to 200
Document Number: 93552
700 (345)
VALUES
VALUES
55 (85)
DO-200AB (B-PUK)
(1000)
0.011
1310
7500
7850
6310
6600
2810
9800
0.88
0.99
0.78
0.73
1.66
0.05
281
257
199
182
250
Revision: 14-May-08
UNITS
UNITS
UNITS
K/W
kA
kA
K/W
m
(kg)
°C
°C
A
A
V
V
N
g
2
2
s
s

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