VS-MURB1020CTTRRP Vishay Semiconductors, VS-MURB1020CTTRRP Datasheet - Page 4

no-image

VS-MURB1020CTTRRP

Manufacturer Part Number
VS-MURB1020CTTRRP
Description
Rectifiers 200 Volt 10 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MURB1020CTTRRP

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V
Recovery Time
35 ns
Forward Continuous Current
10 A
Max Surge Current
50 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
800
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
Vishay High Power Products
Note
(1)
www.vishay.com
4
94518_05
94518_06
Formula used: T
Pd = Forward power loss = I
Pd
REV
180
170
160
150
140
130
Fig. 5 - Maximum Allowable Case Temperature vs.
7
6
5
4
3
2
1
0
= Inverse power loss = V
0
0
Fig. 6 - Forward Power Loss Characteristics
Rated V
ee note (1)
I
I
F(AV)
F(AV)
uare wave (D = 0.50)
1
C
- Average Forward Current (A)
- Average Forward Current (A)
R
Average Forward Current
= T
applied
2
2
J
- (Pd + Pd
3
F(AV)
DC
4
4
R1
x V
REV
x I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
5
FM
) x R
R
(1 - D); I
For technical questions, contact:
at (I
6
6
thJC
RM limit
F(AV)
;
7
R
/D) (see fig. 6);
at V
8
8
R1
= Rated V
Ultrafast Rectifier,
2 x 5 A FRED Pt
R
94518_07
94518_08
diodestech@vishay.com
160
140
120
100
®
50
40
30
20
10
80
60
40
20
0
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
V
T
T
Fig. 8 - Typical Stored Charge vs. dI
I
I
J
J
R
F
F
= 125 °C
= 25 °C
= 160 V
= 10 A
= 5 A
dI
dI
F
F
/dt (A/μs)
/dt (A/μs)
V
T
T
R
J
J
= 125 °C
= 25 °C
= 160 V
Document Number: 94518
I
I
F
F
Revision: 11-Mar-10
= 10 A
= 5 A
F
/dt
1000
1000
F
/dt

Related parts for VS-MURB1020CTTRRP