CY7C1308DV25C-167BZC Cypress Semiconductor Corp, CY7C1308DV25C-167BZC Datasheet - Page 9

• Manufacturer Part Number: CY7C1308DV25C-167BZC
• Description: IC SRAM 9MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1308DV25C-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR
• Memory Size: 9M (256K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Document #: 001-04310 Rev. *A
Notes
19. This part has a voltage regulator that steps down the voltage internally; t
20. t
21. At any given voltage and temperature t
22. Q01 refers to output from address A0. Q02 refers to output from the next internal burst address following A0, i.e., A0+1.
23. Outputs are disabled (High-Z) one clock cycle after a NOP.
24. In this example, if address A4 = A3, then data Q41 = D31, Q42 = D32, Q43 = D33, and Q44 = D34. Write data is forwarded immediately as Read results.This
or Write operation can be initiated.
note applies to the whole diagram.
CHZ
, t
CLZ
, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
[22, 23, 24]
CHZ
is less than t
CLZ
PRELIMINARY
and, t
CHZ
less than t
Power
is the time power needs to be supplied above V
CO
.
DD
minimum initially before a Read
CY7C1308DV25C
Page 9 of 18
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