CY14B101L-SZ35XC Cypress Semiconductor Corp, CY14B101L-SZ35XC Datasheet - Page 12

IC NVSRAM 1MBIT 35NS 32SOIC

CY14B101L-SZ35XC

Manufacturer Part Number
CY14B101L-SZ35XC
Description
IC NVSRAM 1MBIT 35NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY14B101L-SZ35XC

Memory Size
1M (128K x 8)
Interface
Parallel
Package / Case
32-SOIC (7.5mm Width)
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Speed
35ns
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
35ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
0°C To +70°C
Memory Configuration
128K X 8
Interface Type
Parallel
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-2029-5
CY14B101L-SZ35XC
AutoStore or Power Up RECALL
Switching Waveforms
Notes
Document Number: 001-06400 Rev. *K
t
t
V
t
13. t
14. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place.
15. Industrial Grade devices requires 15 ms max.
HRECALL
STORE
VCCRISE
SWITCH
Note Read and Write cycles are ignored during STORE, RECALL, and while Vcc is below V
HRECALL
Read & Write Inhibited
Parameter
POWER-UP RECALL
[14, 15]
AutoStore
[13]
starts from the time V
V
SWITCH
V
CC
t
t
RESTORE
HLHZ
t
VCCRISE
CC
Alt
rises above V
t
HRECALL
Power up RECALL Duration
STORE Cycle Duration
Low Voltage Trigger Level
V
SWITCH
CC
Figure 9. AutoStore/Power Up RECALL
Rise Time
.
Description
t
STORE
SWITCH
t
HRECALL
STORE occurs only
if a SRAM write
has happened
Min
150
CY14B101L
t
STORE
Max
12.5
2.65
20
No STORE occurs
without atleast one
SRAM write
CY14B101L
Page 12 of 20
Unit
ms
ms
μs
V
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