CY62147EV30LL-55ZSXE Cypress Semiconductor Corp, CY62147EV30LL-55ZSXE Datasheet - Page 9

• Manufacturer Part Number: CY62147EV30LL-55ZSXE
• Description: IC SRAM 4MBIT 55NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62147EV30LL-55ZSXE

• Memory Size: 4M (256K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Access Time: 55 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
Notes
Document Number: 38-05440 Rev. *J
31. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE
32. If CE goes HIGH simultaneously with WE = V
33. During this period, the I/Os are in output state. Do not apply input signals.
CE
ADDRESS
ADDRESS
BHE/BLE
BHE/BLE
DATA I/O
DATA I/O
2
such that when CE
WE
WE
CE
CE
NOTE 33
1
NOTE 33
is LOW and CE
t
SA
Figure 11. Write Cycle No. 4: BHE/BLE Controlled, OE LOW
(continued)
t
SA
Figure 10. Write Cycle No. 3: WE Controlled, OE LOW
2
is HIGH, CE is LOW. For all other cases CE is HIGH.
IH
t
HZWE
, the output remains in a high impedance state.
t
HZWE
t
t
AW
AW
t
t
t
SCE
BW
SCE
t
PWE
t
t
WC
WC
t
PWE
t
BW
DATA
DATA
t
SD
t
SD
IN
IN
t
[31, 32]
HD
t
HD
t
CY62147EV30 MoBL
t
HA
t
HA
[31, 32]
LZWE
t
LZWE
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