W25X40BVDAIG Winbond Electronics, W25X40BVDAIG Datasheet - Page 42

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W25X40BVDAIG

Manufacturer Part Number
W25X40BVDAIG
Description
IC SPI FLASH 4MBIT 8PDIP
Manufacturer
Winbond Electronics
Datasheet

Specifications of W25X40BVDAIG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
104MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10.7 AC Electrical Characteristics (
Notes:
DESCRIPTION
/HOLD Active Setup Time relative to CLK
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic
Signature Read
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time W25X10BV / W25X20BV
Chip Erase Time W25X40BV
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/f
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP is set to 1.
For multiple bytes after first byte within a page,
N = number of bytes programmed.
(4)
cont’d)
t
BPN
- 42 -
(4)
=
C
t
BP1 +
.
SYMBOL
t
t
t
t
t
t
HHQX
WHSL
SHWL
RES
RES
t
t
HLQZ
t
t
t
CHHH
HHCH
HLCH
CHHL
t
t
DP
t
t
t
t
t
BE
BE
t
BP1
BP2
t
PP
SE
CE
W
BP2 * N
(2)
1
2
W25X10BV/20BV/40BV
1
2
(2)
(2)
(2)
(2)
(3)
(3)
(typical) and
ALT
t
t
HZ
LZ
MIN
100
t
20
BPN
5
5
5
5
=
t
BP1 +
TYP
SPEC
120
150
2.5
0.7
0.5
10
30
30
1
t
BP2 * N
(max), where
1,000
MAX
200
800
1.8
12
15
50
12
7
3
3
3
2
4
UNIT
ms
ms
ms
ms
ms
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
s

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