MT47H32M8BP-3:B TR Micron Technology Inc, MT47H32M8BP-3:B TR Datasheet - Page 19

• Manufacturer Part Number: MT47H32M8BP-3:B TR
• Description: IC DDR2 SDRAM 256MB 60-FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H32M8BP-3:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1050-2

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE,
ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Notes:
1. This parameter is sampled. V
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.5pF for the -3 speed device.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, V
OUT(DC)
= V
19
DDQ
DD
= +1.8V ±0.1V, V
/2, V
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(peak-to-peak) = 0.1V. DM input is grouped
256Mb: x4, x8, x16 DDR2 SDRAM
DDQ
= +1.8V ±0.1V, V
Symbol Min Max Units Notes
C
C
C
C
C
DCK
C
DIO
CK
IO
DI
I
©2003 Micron Technology, Inc. All rights reserved.
1.0
1.0
2.5
–
–
–
REF
0.25
0.25
2.0
2.0
4.0
0.5
= V
Packaging
SS
pF
pF
pF
pF
pF
pF
, f = 100
2, 3
2, 3
1, 4
2, 3
1
1