M25P10-AVMP6T NUMONYX, M25P10-AVMP6T Datasheet - Page 42

IC FLASH 1MBIT 40MHZ 8VFQFPN

M25P10-AVMP6T

Manufacturer Part Number
M25P10-AVMP6T
Description
IC FLASH 1MBIT 40MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P10-AVMP6T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
40MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3592-2

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Part Number:
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Manufacturer:
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DC and AC parameters
42/51
Table 20.
1. Details of how to find the process on the device marking are given in application note AN1995.
2. 50 MHz operation is also available in products with process technology code X, but with a reduced supply
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
Symbol
t
t
t
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
CLCH
CHCL
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CHDX
CHSH
SHCH
CHHH
HHCH
DVCH
CLQV
CLQX
HLCH
CHHL
CH
SLCH
CHSL
SHSL
DP
CL
voltage range (2.7 to 3.6 V).
CH
f
f
C
R
(3)
(3)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
+ t
(4)
(6)
(6)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
50 MHz available only in products with process technology code Y
CSS
DSU
t
CSH
t
CLH
CLL
t
DIS
DH
HO
f
t
HZ
LZ
C
AC characteristics (50 MHz operation, device grade 6)
V
Clock frequency
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup time
Write Protect Hold time
S High to Deep Power-down mode
S High to Standby mode without Read Electronic
Signature
S High to Standby mode with Read Electronic
Signature
Test conditions specified in
(5)
(5)
(1)
(peak to peak)
(peak to peak)
for the following instructions:
Parameter
C
.
Table 10
and
Table 12
D.C.
D.C.
Min
100
100
0.1
0.1
20
5
5
5
9
9
5
2
5
5
5
0
5
5
Typ
(1)(2)
Max
50
25
30
30
M25P10-A
8
8
8
8
3
MHz
MHz
Unit
V/ns
V/ns
ns
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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