CY7C1470V33-167BZXC Cypress Semiconductor Corp, CY7C1470V33-167BZXC Datasheet - Page 18

• Manufacturer Part Number: CY7C1470V33-167BZXC
• Description: IC SRAM 72MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470V33-167BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05289 Rev. *J
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC to Outputs in Tristate..................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Electrical Characteristics
Commercial
Industrial
V
V
V
V
V
V
I
I
Notes
X
OZ
13. Overshoot: V
14. T
Parameter
DD
DDQ
OH
OL
IH
IL
Range
power up
: Assumes a linear ramp from 0V to V
–40°C to +85°C
IH
Temperature
0°C to +70°C
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
(AC) < V
Ambient
DD
DDQ
Description
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
Relative to GND ...... –0.5V to +V
–5%/+10%
[13]
[13]
3.3V
V
Over the Operating Range
DD
DD
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND ≤ V
Input = V
Input = V
Input = V
(Min) within 200 ms. During this time V
CYC
2.5V – 5%
DDQ
I
SS
DD
SS
DD
I
≤ V
≤ V
DD
to V
V
/2), undershoot: V
DDQ
OH
OH
OL
OL
DDQ
DDQ,
+ 0.5V
+ 0.5V
DD
= 8.0 mA
= 1.0 mA
= −1.0 mA
= −4.0 mA
DD
Output Disabled
Test Conditions
[13, 14]
IL
Neutron Soft Error Immunity
(AC)> –2V (Pulse width less than t
Parameter Description
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
IH
< V
2
, 95% confidence limit calculation. For more details refer to Appli-
DD
and V
Logical
Single Bit
Upsets
Logical Multi
Bit Upsets
Single Event
Latch up
DDQ
< V
DD
.
CYC
Conditions Typ Max* Unit
/2).
25°C
25°C
85°C
Test
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
CY7C1470V33
CY7C1472V33
CY7C1474V33
V
V
361
DD
DD
0
0
2.625
Max
V
3.6
0.4
0.4
0.8
0.7
30
+ 0.3V
+ 0.3V
5
5
5
DD
Page 18 of 30
0.01
394
0.1
Unit
FIT/
FIT/
FIT/
Dev
μA
μA
μA
μA
μA
μA
Mb
Mb
V
V
V
V
V
V
V
V
V
V
V
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