CY7C1470BV33-167BZC Cypress Semiconductor Corp, CY7C1470BV33-167BZC Datasheet - Page 20

• Manufacturer Part Number: CY7C1470BV33-167BZC
• Description: IC SRAM 72MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC to Outputs in Tri-State.................... –0.5V to V
Electrical Characteristics
Over the Operating Range
Notes
Document #: 001-15031 Rev. *C
V
V
V
V
V
V
I
I
I
I
I
13. Overshoot: V
14. T
15. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
SB1
SB2
Parameter
DD
DDQ
OH
OL
IH
IL
[15]
Power-up
: assumes a linear ramp from 0V to V
IH
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE
Power Down
Current—CMOS Inputs
(AC) < V
DD
Operating Supply
DD
DDQ
Description
DD
Relative to GND ........–0.5V to +4.6V
+1.5V (pulse width less than t
Relative to GND.......–0.5V to +V
[13, 14]
[13]
[13]
DD
For 3.3V IO
For 2.5V IO
For 3.3V IO, I
For 2.5V IO, I
For 3.3V IO, I
For 2.5V IO, I
For 3.3V IO
For 2.5V IO
For 3.3V IO
For 2.5V IO
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
Max. V
V
f = f
Max. V
V
f = 0
DD
IN
IN
(min.) within 200 ms. During this time V
MAX
MAX
≤ 0.3V or V
≥ V
= Max., I
DD
DD
CYC
IH
= 1/t
= 1/t
DDQ
I
I
SS
DD
SS
DD
, Device Deselected,
, Device Deselected,
or V
≤ V
≤ V
/2). Undershoot: V
CYC
CYC
OUT
+ 0.5V
OH
OH
OL
OL
DDQ
DDQ,
IN
IN
= 8.0 mA
= 1.0 mA
= −1.0 mA
≤ V
= −4.0 mA
> V
DD
= 0 mA,
Output Disabled
Test Conditions
IL
DDQ
,
IL
− 0.3V,
(AC)> –2V (pulse width less than t
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
< V
CY7C1472BV33, CY7C1474BV33
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
–5%/+10%
3.3V
V
CY7C1470BV33
DD
V
V
DD
DD
2.625
Max
V
500
500
450
245
245
245
120
3.6
0.4
0.4
0.8
0.7
30
+ 0.3V
+ 0.3V
DD
5
5
5
2.5V – 5%
Page 20 of 30
DD
to V
V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
+ 0.5V
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
DD
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