CY7C1518AV18-250BZI Cypress Semiconductor Corp, CY7C1518AV18-250BZI Datasheet - Page 19

• Manufacturer Part Number: CY7C1518AV18-250BZI
• Description: IC SRAM 72MBIT 250MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1518AV18-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 72M (4M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65° C to +150 °C
Ambient temperature with power applied . –55° C to +125° C
Supply voltage on V
Supply voltage on V
DC applied to outputs in High-Z ........–0.5 V to V
DC input voltage
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage (MIL-STD-883, M 3015).... >2001 V
Latch-up current ..................................................... >200 mA
Operating Range
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-06982 Rev. *F
V
V
V
V
V
V
V
V
I
I
V
15. Power-up: assumes a linear ramp from 0 V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
Commercial
Industrial
X
OZ
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
Range
REF
(min) = 0.68 V or 0.46 V
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
Input reference voltage
[11]
Temperature (T
–40° C to +85° C
0 °C to +70 °C
DD
DDQ
............................ –0.5 V to V
Description
Ambient
relative to GND ........–0.5 V to +2.9 V
relative to GND....... –0.5 V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
= –(V
A
)
DDQ
[18]
DDQ
1.8 ± 0.1 V
/2)/(RQ/5) for values of 175 Ω < RQ < 350 Ω
DD
V
/2)/(RQ/5) for values of 175 Ω < RQ < 350 Ω
DD
(min) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical value = 0.75 V
OH
OL
[15]
REF
= 0.1 mA, nominal impedance
= −0.1 mA, nominal impedance
DDQ
(max) = 0.95 V or 0.54 V
DD
I
I
V
+ 0.3 V
+ 0.3 V
1.4 V to
≤ V
≤ V
DDQ
V
Test Conditions
DD
DDQ
DDQ,
DD
[15]
output disabled
Neutron Soft Error Immunity
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
Application Note,
Failure Rates – AN54908
DDQ
Parameter
, whichever is smaller
IH
< V
DD
2
, 95% confidence limit calculation. For more details refer to
and V
Accelerated Neutron SER Testing and Calculation of Terrestrial
Description
Single event
DDQ
single-bit
multi-bit
latch-up
Logical
Logical
upsets
upsets
V
V
< V
DDQ
DDQ
V
V
DDQ
REF
DD
–0.3
0.68
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
Conditions
25° C
25° C
85° C
Test
0.75
Typ
1.8
1.5
CY7C1518AV18
CY7C1520AV18
V
V
DDQ
DDQ
V
V
Typ Max* Unit
320
DDQ
REF
0
0
V
Max
0.95
V
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 19 of 28
0.01
368
0.1
Unit
FIT/
FIT/
FIT/
Dev
Mb
Mb
μA
μA
V
V
V
V
V
V
V
V
V
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