VS-MBRD650CTTRPBF Vishay Semiconductors, VS-MBRD650CTTRPBF Datasheet

no-image

VS-MBRD650CTTRPBF

Manufacturer Part Number
VS-MBRD650CTTRPBF
Description
Schottky Diodes & Rectifiers 6.0 Amp 50 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MBRD650CTTRPBF

Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
50 V
Forward Continuous Current
6 A
Max Surge Current
490 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.7 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK (TO-252AA)
Factory Pack Quantity
2000
Document Number: 94314
Revision: 14-Jan-11
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
F(AV)
FSM
J
RRM
F
D-PAK (TO-252AA)
Diode variation
Package
T
V
J
I
F
E
F(AV)
I
V
max.
RM
at I
AS
R
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
per device
per leg
Rectangular waveform
t
3 Apk, T
Range
p
Anode
= 5 μs sine
D-PAK (TO-252AA)
Common cathode
15 mA at 125 °C
CHARACTERISTICS
Schottky Rectifier, 2 x 3 A
1
50 V, 60 V
SYMBOL
Common
J
common
cathode
cathode
2 x 3 A
150 °C
0.65 V
= 125 °C (per leg)
Base
6 mJ
I
I
F(AV)
E
FSM
I
AR
AS
2
4
SYMBOL
VS-MBRD650CTPbF, VS-MBRD660CTPbF
V
RWM
Anode
V
R
3
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
= 25 °C, I
VS-MBRD650CTPbF
AS
= 1 A, L = 12 mH
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
DESCRIPTION
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface
mount, center tap, Schottky rectifier series has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in
disk
freewheeling diodes, battery charging, and reverse battery
protection.
reliability
260 °C
TEST CONDITIONS
C
50
= 128 °C, rectangular waveform
J
drives,
maximum V
- 40 to 150
VALUES
DiodesEurope@vishay.com
50/60
0.65
490
6
switching
A
VS-MBRD660CTPbF
Following any rated load
condition and with rated
V
RRM
= 1.5 x V
Vishay Semiconductors
applied
60
R
power
typical
supplies,
UNITS
VALUES
°C
A
V
A
V
490
3.0
0.6
75
6
6
www.vishay.com
UNITS
V
converters,
UNITS
mJ
A
A
1

Related parts for VS-MBRD650CTTRPBF

VS-MBRD650CTTRPBF Summary of contents

Page 1

... Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface mount, center tap, Schottky rectifier series has been 0.65 V designed for applications requiring low forward drop and 125 °C small foot prints on PC boards. Typical applications are in 150 ° ...

Page 2

... VS-MBRD650CTPbF, VS-MBRD660CTPbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop per leg See fig. 1 Maximum reverse leakage current per leg See fig. 2 Typical junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < ...

Page 3

... V - Forward Voltage Drop (V) FM Fig Maximum Forward Voltage Drop Characteristics (Per Leg) Fig Typical Junction Capacitance vs. Reverse Voltage (Per Leg Single pulse (thermal resistance) 0.1 0.00001 0.0001 Fig Maximum Thermal Impedance Z Document Number: 94314 For technical questions within your region, please contact one of the following: Revision: 14-Jan-11 DiodesAmericas@vishay ...

Page 4

... VS-MBRD650CTPbF, VS-MBRD660CTPbF Vishay Semiconductors DC Square wave (D = 0.50 rated V applied R See note (1) 0 0.5 1.0 1.5 2.0 2.5 3 Average Forward Current (A) F(AV) Fig Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Note (1) Formula used ( REV Pd = Forward power loss = F(AV Inverse power loss = ...

Page 5

... Dimensions Part marking information Packaging information Document Number: 94314 For technical questions within your region, please contact one of the following: Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-MBRD650CTPbF, VS-MBRD660CTPbF Schottky Rectifier MBR Vishay Semiconductors product ...

Page 6

... H 0.035 L 0.045 L1 0.215 3 L2 0.024 L3 0.035 L4 0.245 Ø 0.265 5 Ø Ø2 1 Outline Dimensions Vishay Semiconductors Pad layout 0.265 MIN. (6.74 0.488 (12.40) 0.409 (10.40 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) H (7) C Seating plane MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.29 BSC 0.090 BSC 9 ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

Related keywords