CY7C1168V18-400BZXC Cypress Semiconductor Corp, CY7C1168V18-400BZXC Datasheet - Page 16

• Manufacturer Part Number: CY7C1168V18-400BZXC
• Description: IC SRAM 18MBIT 400MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1168V18-400BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TAP AC Switching Characteristics
The Tap AC Switching Characteristics over the operating range follows.
TAP Timing and Test Condition
The Tap Timing and Test Conditions for the CY7C1166V18, CY7C1177V18, CY7C1168V18, and CY7C1170V18 follows.
Notes
Document Number: 001-06620 Rev. *D
t
t
t
t
Setup Times
t
t
t
Hold Times
t
t
t
Output Times
t
t
13. t
14. Test conditions are specified using the load in TAP AC test conditions. t
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
Parameter
CS
and t
CH
refer to the setup and hold time requirements of latching data from the boundary scan register.
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data In
TDI
Test Data Out
TDO
Z
0
= 50Ω
(a)
GND
0.9V
Figure 4. TAP Timing and Test Conditions
C
50Ω
L
= 20 pF
Description
R
t
/t
TMSS
t
F
TDIS
= 1 ns
t
t
0V
TDOV
TH
[13, 14]
t
t
TL
TMSH
t
TDIH
1.8V
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
ALL INPUT PULSES
t
0.9V
TDOX
t
TCYC
Min
50
20
20
5
5
5
5
5
5
0
Max
20
10
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[14]
MHz
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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