CY7C1069AV33-10ZXC Cypress Semiconductor Corp, CY7C1069AV33-10ZXC Datasheet - Page 3

• Manufacturer Part Number: CY7C1069AV33-10ZXC
• Description: IC SRAM 16MBIT 10NS 54TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1069AV33-10ZXC

• Memory Size: 16M (2M x 8)
• Package / Case: 54-TSOP II
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 275 mA
• Organization: 2 M x 8
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 2M X 8
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1986; CY7C1069AV33-10ZXC

Document #: 38-05255 Rev. *F
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Notes:
V
V
V
V
I
I
I
I
I
C
C
Parameter
3. V
4. Tested initially and after any design or process changes that may affect these parameters.
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IN
OUT
minimum operating V
Parameter
IL
OUTPUT
(min.) = –2.0V for pulse durations of less than 20 ns.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current GND < V
V
Supply Current
Automatic CE
Power-down Current
—TTL Inputs
Automatic CE
Power-down Current
—CMOS Inputs
[3]
CC
[4]
....................................–0.5V to V
Operating
Description
Z 0 = 50Ω
DD
CC
, normal SRAM operation can begin including reduction in V
Input Capacitance
to Relative GND
I/O Capacitance
(a)
Description
Rise time > 1V/ns
[3]
30 pF* *Capacitive Load consists of all
50Ω
GND
3.3V
Over the Operating Range
V
V
GND < V
V
f = f
CE
Max. V
V
CE
CE
V
or V
[3]
CC
CC
CC
IN
IN
[5]
2
2
1
.... –0.5V to +4.6V
MAX
> V
> V
components of the test environment
> V
IN
= Min., I
= Min., I
= Max.,
< V
< 0.3V, Max. V
< 0.3V, f = 0
CC
T
IH
CC
V
CC
IL
= 1/t
A
OUT
I
TH
Test Conditions
,
, CE
or V
< V
= 25°C, f = 1 MHz, V
– 0.3V,
– 0.3V,
CC
= 1.5V
OH
OL
RC
< V
CC
IN
1
+ 0.5V
> V
= 8.0 mA
10%
= –4.0 mA
CC
< V
90%
Test Conditions
, Output Disabled
IH
All input pulses
CC
IL
, f = f
,
(c)
MAX
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Operating Range
Commercial
Industrial
DD
CC
to the data retention (V
Range
= 3.3V
Min.
–0.3
2.4
2.0
–1
–1
90%
DD
[3]
10%
–10
OUTPUT
Fall time: > 1V/ns
(3.0V). As soon as 1ms (T
................................ –0.5V to V
V
CC
3.3V
–40°C to +85°C
Max.
CCDR
275
*Including
jig and
scope
Temperature
0°C to +70°C
0.4
0.8
TSOP II
+1
+1
70
50
+ 0.3
Ambient
, 2.0V) voltage.
6
8
5 pF*
Min.
–0.3
CY7C1069AV33
R1 317 Ω
2.4
2.0
–1
–1
(b)
–12
FBGA
power
10
V
8
CC
) after reaching the
Max.
260
0.4
0.8
+1
+1
70
50
3.3V ± 0.3V
+ 0.3
Page 3 of 9
V
351Ω
CC
R2
CC
Unit
+ 0.5V
pF
pF
Unit
mA
mA
mA
µA
µA
V
V
V
V
[+] Feedback