CY7C188-20VC Cypress Semiconductor Corp, CY7C188-20VC Datasheet
CY7C188-20VC
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CY7C188-20VC Summary of contents
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... WE OE Cypress Semiconductor Corporation Document #: 38-05053 Rev. *C Functional Description The CY7C188 is a high-performance CMOS static RAM organized as 32,768 words by 9 bits. Easy memory expansion is provided by an active-LOW chip enable (CE chip enable (CE tri-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 75% when deselected ...
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... Write Cycle No. 3 (WE Controlled, OE LOW) ............. 7 Document #: 38-05053 Rev. *C Truth Table ........................................................................ 7 Ordering Information ........................................................ 8 Ordering Code Definitions ........................................... 8 Package Diagram .............................................................. 8 Acronyms .......................................................................... 9 Document Conventions ................................................... 9 Units of Measure ......................................................... 9 Document History Page ................................................. 10 Sales, Solutions, and Legal Information ...................... 10 Worldwide Sales and Design Support ....................... 10 Products .................................................................... 10 PSoC Solutions ......................................................... 10 CY7C188 Page [+] Feedback ...
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... Pin Configuration Selection Guide Description Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) Document #: 38-05053 Rev. *C SOJ Top View GND 16 17 I/O 4 –20 20 170 15 CY7C188 Page [+] Feedback ...
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... CC OUT V V Max MAX V Max –0 V 0 – 0 Test Conditions = 25 MHz 5 CY7C188 [1] .............................. –0 0 Ambient Temperature V CC 10 +70 C –20 Unit Min Max 2.4 – V – 0 –0.5 0.8 V A –5 +5 A –5 ...
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... HIGH to Write End [5] [ less than less than t , and t HZCE LZCE HZOE LZOE , LOW, CE HIGH, and WE LOW. All three signals must be asserted to initiate a write and any 1 2 and t . HZWE SD CY7C188 ALLINPUTPULSES 90% 90% 10% 10% C188–4 –20 Min Max Unit 20 – ns – – ...
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... AW t PWE t SD DATA VALID IN and only the timing for CE is shown LOW, CE HIGH, and WE LOW. All three signals must be asserted to initiate a write and any 1 2 CY7C188 DATA VALID C188–5 t HZOE t HZCE HIGH IMPEDANCE t PD ICC 50% ISB C188– C188–7 ...
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... VALID IN Mode Deselect/Power-Down Read Write Deselect, Output Disabled , LOW, CE HIGH, and WE LOW. All three signals must be asserted to initiate a write and any 1 2 and t . HZWE SD and only the timing for CE is shown CY7C188 C188– LZWE C188–9 Power Standby ( Active ( Active (I ...
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... V = 32-pin (300-Mil) Molded SOJ 20 = Speed grade Part Identifier Family Fast asynchronous SRAM Company ID Cypress Package Diagram Figure 1. 32-Lead (300-Mil) Molded SOJ, 51-85041 Document #: 38-05053 Rev. *C Package Package Type Name 51-85041 32-pin (300-Mil) Molded SOJ CY7C188 Operating Range Commercial 51-85041 *B Page [+] Feedback ...
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... J-lead TTL transistor-transistor logic WE write enable Document #: 38-05053 Rev. *C Document Conventions Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA micro Amperes mA milli Amperes mV milli Volts mW milli Watts pF pico Farad °C degree Celcius W Watts % percent MHz Mega Hertz CY7C188 Page [+] Feedback ...
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... Document History Page Document Title: CY7C188 32 K × 9 Static RAM Document Number: 38-05053 Issue Date Orig. of REV. ECN NO. Change ** 107155 09/10/01 *A 506367 See ECN *B 2894123 03/17/2010 *C 3096933 11/30/2010 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office ...