MAX6841IUKD4+T Maxim Integrated, MAX6841IUKD4+T Datasheet - Page 15
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MAX6841IUKD4+T
Manufacturer Part Number
MAX6841IUKD4+T
Description
Supervisory Circuits
Manufacturer
Maxim Integrated
Series
MAX6841, MAX6842, MAX6843, MAX6844, MAX6845r
Datasheet
1.MAX6841IUKD4T.pdf
(24 pages)
Specifications of MAX6841IUKD4+T
Number Of Voltages Monitored
1
Monitored Voltage
0.9 V to 1.5 V
Undervoltage Threshold
1.35 V
Overvoltage Threshold
1.425 V
Output Type
Active High, Active Low, Push-Pull
Manual Reset
Resettable
Watchdog
No Watchdog
Battery Backup Switching
No Backup
Power-up Reset Delay (typ)
2240 ms
Supply Voltage - Max
1.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Chip Enable Signals
No
Maximum Power Dissipation
571 mW
Minimum Operating Temperature
- 40 C
Power Fail Detection
No
Supply Current (typ)
8.1 uA
Supply Voltage - Min
0.75 V
Figure 1. MAX1937 Application Circuit
connect a capacitor (C
this capacitor as close as possible to the VLG pin.
The MAX1937/MAX1938/MAX1939 also require an exter-
nal 5V supply connected to V
voltage drop of about 1V (D1) is used to stepdown the
6V supply to power the IC, as shown in Figure 1. The
diode connects between the linear regulator output and
the RC filter used to filter the voltage at V
and C3). In the PC board layout, place C
possible to the V
C2
2.2μF
1
IN
KA78M06
GND
U2
2
OUT
3
C1
2.2μF
DD
______________________________________________________________________________________
CENTRAL
CMHD4448
pin.
GNDS
0.47μF
C
47pF
68kΩ
C
VPOS
R4
REF
1
Controllers with Controlled VID Change
D1
VID3
VID0
VID1
VID2
VID4
VLG
C3
2.2μF
EN
2
) from VLG to PGND. Place
Two-Phase Desktop CPU Core Supply
10Ω
R1
DD
51.1kΩ
200kΩ
R
VPOS
R3
C
0.01μF
10kΩ
VDD
R5
. A diode with a forward
120kΩ
R
TIME
VDD
12
10
11
13
28
3
9
2
5
7
8
1
4
6
VDD
DD
V
V
VID0
VID2
VID4
TIME
VPOS
REF
ILIM
GND
GNDS
VID1
VID3
EN
CC
DD
as close as
(R1, C
MAX1937
U1
VDD
PWRGD
PGND
BST1
BST2
DH1
DH2
CS1
VLG
CS2
LX2
LX1
DL1
DL2
,
BF
13
26
25
27
23
24
22
21
19
20
16
18
17
14
The drive voltage for the high-side MOSFETs is gener-
ated using a bootstrap circuit. The capacitor, C
should be sized properly to minimize the ripple voltage
for switching. The ripple voltage should be less than
200mV. For more information on selecting capacitors
for the BST circuit, see the Selecting a BST Capacitor
section. To minimize the forward voltage drop across
the bootstrap diodes (D2), use Schottky diodes. The
recommended value for the boost capacitors (C
0.22µF.
3
C
1μF
VDD
VLG
D2
CENTRAL CMPSH-3A
INPUT: 8V TO 14V
1
R2
100kΩ
2
High-Side Gate-Drive Supply (BST_)
FB
C
0.22μF
C
0.22μF
BST1
BST2
10kΩ
R6
1
1
1
1
N3
N3
N2
N4
6 × 390μF SP-CAP
PANASONIC EEFUE0D391XR
AND 4 × 1μF CERAMIC CAPACITORS
TAIYO YUDEN LMK212BJ105MG
V
IN
FAIRCHILD
2 × ISL9N303AS3ST
2
2
2
2
C
FAIRCHILD
2 × ISL9N303AS3ST
N1
3
3
3
3
IN
IR: 2 × 1RLR7811W
V
IN
6 × 10μF CERAMIC CAPACITORS
TAIYO YUDEN TMK432BJ106MM
AND 2 × 100μF OS-CON
SANYO 16SP100M
IR: 2 × IRLR7811W
SUMIDA CDEP134-6
SUMIDA CDEP134-6
1mΩ
R
1mΩ
R
CS1
CS2
0.66μH
0.66μH
L1
L2
PWRGD
OUTPUT
0.8V TO 1.55V
46A
C
OUT
BST_
BST_
V
) is
OUT
15
,