CY62157ELL-45ZSXI Cypress Semiconductor Corp, CY62157ELL-45ZSXI Datasheet

IC SRAM 8MBIT 45NS 44TSOP

CY62157ELL-45ZSXI

Manufacturer Part Number
CY62157ELL-45ZSXI
Description
IC SRAM 8MBIT 45NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY62157ELL-45ZSXI

Memory Size
8M (512K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
25 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Memory Configuration
512K X 16
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2077
CY62157ELL-45ZSXI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62157ELL-45ZSXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY62157ELL-45ZSXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
8-Mbit (512K x16) Static RAM
Features
Functional Description
The CY62157E is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
Note
Cypress Semiconductor Corporation
Document #: 38-05695 Rev. *G
1. For best practice recommendations, please refer to the Cypress application note
Logic Block Diagram
Very high speed: 45 ns
Wide voltage range: 4.5V–5.5V
Ultra low standby power
Ultra low active power
Ultra low standby power
Easy memory expansion with CE
Automatic power down when deselected
CMOS for optimum speed and power
Available in Pb-free 44-pin TSOP II and 48-ball VFBGA
package
Industrial: –40°C to +85°C
Automotive-E: –40°C to +125°C
Typical standby current: 2 A
Maximum standby current: 8 A (Industrial)
Typical active current: 1.8 mA at f = 1 MHz
Power Down
Circuit
[1]
1
A
, CE
A
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
1
0
2
CE
CE
BHE
BLE
and OE features
2
1
198 Champion Court
COLUMN DECODER
DATA IN DRIVERS
RAM Array
512K x 16
AN1064, SRAM System
is ideal for providing More Battery Life (MoBL
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Place the device
into standby mode when deselected (CE
both BHE and BLE are HIGH). The input or output pins (I/O
through I/O
To write to the device, take Chip Enable (CE
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
A
(I/O
address pins (A
To read from the device, take Chip Enable (CE
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on I/O
memory appears on I/O
page 10 for a complete description of read and write modes.
8-Mbit (512K x 16) Static RAM
18
Deselected (CE
Outputs are disabled (OE HIGH)
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
Write operation is active (CE
). If Byte High Enable (BHE) is LOW, then data from I/O pins
8
through I/O
0
to I/O
15
San Jose
7
) are placed in a high impedance state when:
. If Byte High Enable (BHE) is LOW, then data from
0
15
through A
Guidelines.
1
) is written into the location specified on the
HIGH or CE
,
CA 95134-1709
8
to I/O
18
I/O
I/O
).
0
8
1
2
15
–I/O
–I/O
LOW, CE
LOW)
CY62157E MoBL
BHE
WE
OE
BLE
. See the
7
15
Revised December 20, 2010
1
2
HIGH or CE
0
“Truth Table”
HIGH and WE LOW)
through I/O
1
LOW and CE
1
®
LOW and CE
CE
CE
) in portable
408-943-2600
2
1
2
0
LOW or
7
through
on
), is
2
0
®
2
[+] Feedback

Related parts for CY62157ELL-45ZSXI

CY62157ELL-45ZSXI Summary of contents

Page 1

... Power Down Circuit Note 1. For best practice recommendations, please refer to the Cypress application note Cypress Semiconductor Corporation Document #: 38-05695 Rev. *G 8-Mbit (512K x 16) Static RAM is ideal for providing More Battery Life (MoBL applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling ...

Page 2

Contents Product Portfolio .............................................................. 3 Pin Configuration ............................................................. 3 Maximum Ratings ............................................................. 4 Operating Range ............................................................... 4 Electrical Characteristics ................................................. 4 Capacitance ....................................................................... 4 AC Test Loads and Waveforms ....................................... 5 Data Retention Characteristics ....................................... 5 Data Retention Waveform................................................. 5 ...

Page 3

... Product Portfolio V Product Range Min CY62157ELL Industrial 4.5 CY62157ELL Automotive 4.5 Pin Configuration The following pictures show the TSOP II and VFBGA pinouts. TSOP II Top View BLE I I I I I Notes 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured ...

Page 4

... Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05695 Rev Input Voltage Output Current into Outputs (LOW) ............................ 20 mA Static Discharge Voltage .......................................... > 2001V (MIL-STD-883, Method 3015) Latch up Current .................................................... > 200 mA Operating Range Device CY62157ELL 45 ns (Industrial) [8] Min Typ 2.4 2.2 V –0.5 < ...

Page 5

Thermal Resistance [11] Parameter Description  Thermal Resistance Still Air, soldered × 4.5 inch, JA (Junction to Ambient) two-layer printed circuit board  Thermal Resistance JC (Junction to Case) AC Test Loads and Waveforms ...

Page 6

... HZCE HZBE HZWE 19. The internal write time of the memory is defined by the overlap of WE, CE write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. Document #: 38-05695 Rev. *G ...

Page 7

Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID [21, 22] OE Read Cycle No Controlled) ADDRESS BHE/BLE t LZBE OE t HIGH IMPEDANCE DATA OUT t ...

Page 8

... HZOE Notes 23. The internal write time of the memory is defined by the overlap of WE, CE write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 24. Data I/O is high impedance ...

Page 9

Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS BHE/BLE NOTE 28 DATA I/O t HZWE Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS BHE/BLE ...

Page 10

Truth Table BHE 1 2 [29 [29 [29] [29 ...

Page 11

... Ordering Information Speed Package (ns) Ordering Code Diagram 45 CY62157ELL-45ZSXI 51-85087 55 CY62157ELL-55ZSXE 51-85087 CY62157ELL-55BVXE 51-85150 Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions E xx xxx CY 621 Document #: 38-05695 Rev. *G Package Type 44-pin Thin Small Outline Package Type II (Pb-free) ...

Page 12

Package Diagrams Figure 9. 48-Ball VFBGA ( mm), 51-85150 Document #: 38-05695 Rev. *G ® CY62157E MoBL 51-85150 *F Page [+] Feedback ...

Page 13

Package Diagrams (continued TOP VIEW 0.400(0.016) 0.800 BSC 0.300 (0.012) (0.0315) 18.517 (0.729) 18.313 (0.721) DIMENSION IN MM (INCH) MAX MIN. Document #: 38-05695 Rev. *G Figure 10. 44-Pin TSOP II, 51-85087 PIN 1 I. BASE ...

Page 14

Document History Page ® Document Title: CY62157E MoBL , 8-Mbit (512K x 16) Static RAM Document Number: 38-05695 Orig. of Rev. ECN No. Issue Date Change ** 291273 See ECN *A 457689 See ECN *B 467033 See ECN *C 569114 ...

Page 15

... Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement ...

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