CY62167DV30LL-55ZXI Cypress Semiconductor Corp, CY62167DV30LL-55ZXI Datasheet - Page 4

• Manufacturer Part Number: CY62167DV30LL-55ZXI
• Description: IC SRAM 16MBIT 55NS 48TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62167DV30LL-55ZXI

• Memory Size: 16M (1M x 16)
• Package / Case: 48-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 30 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1860

Maximum Ratings
(Above which the useful life may be impaired. For user
guidelines, not tested.)
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential ...... –0.2 V to V
DC voltage applied to outputs
in High-Z state
DC input voltage
Electrical Characteristics
Document Number : 38-05328 Rev. *I
V
V
V
V
I
I
I
I
I
Notes
IX
OZ
CC
SB1
SB2
7. V
8. V
9. Full Device AC operation requires linear V
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
OH
OL
IH
IL
Parameter
IL(min.)
IH(max)
= –2.0 V for pulse durations less than 20 ns.
= V
CC
[7, 8]
+ 0.75 V for pulse durations less than 20 ns.
[7, 8]
Output HIGH voltage I
Output LOW voltage I
Input HIGH voltage
Input LOW voltage
Input leakage current GND < V
Output leakage
current
V
supply current
Automatic
Power-down
current — CMOS
inputs
Automatic
Power-down
current — CMOS
Inputs
................................ –0.2 V to V
CC
............................. –0.2 V to V
Description
Operating
CC
Over the Operating Range
ramp from 0 to V
I
I
V
V
V
V
GND < V
V
I
CMOS levels
CE
V
f = f
f = 0 (OE, WE), V
CE
V
f = 0, V
OH
OH
OL
OL
OUT
IN
CC
CC
CC
CC
CC
IN
1
1
Max
> V
= 0.1 mA
= 2.1 mA
= –0.1 mA
= –1.0 mA
> V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
> V
= 2.2 V to 2.7 V
= 2.2 V to 2.7 V
= V
> V
= 0 mA
CC
(Address and data only),
CC
CC
CC
CC(max)
CC
I
O
– 0.2 V, V
< V
CC
< V
= 3.60 V
CC
CC
0.2 V or CE
– 0.2 V or V
Test Conditions
– 0.2 V or CE
CC
CC(min.)
+ 0.3 V
+ 0.3 V
+ 0.3 V
CC
CC
, Output Disabled
IN
= 3.60 V
and V
< 0.2 V,
V
V
V
V
f = f
f = 1 MHz
CC
CC
CC
CC
IN
2
CC
< 0.2 V,
Max
2
< 0.2V,
= 2.20 V
= 2.70 V
= 2.20 V
= 2.70 V
must be stable at V
< 0.2 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch-up current ..................................................... > 200 mA
Operating Range
= 1/t
CY62167DV30LL Industrial
RC
Device
–0.3
Min Typ
2.0
2.4
1.8
2.2
CY62167DV30-55
–1
–1
CC(min)
–
–
–
–
for 500s.
2.5
2.5
15
–
–
–
–
–
–
2
Range
[10]
CC
+0.3 V
Max
CY62167DV30 MoBL
V
0.4
0.6
0.8
+1
= V
+1
30
22
22
–
4
CC
CC(typ)
–40 °C to +85 °C
–0.3
Min
2.0
2.4
1.8
2.2
Temperature
–1
–1
CY62167DV30-70
–
–
–
, T
Ambient
A
= 25 °C
Typ
2.5
2.5
12
–
–
–
–
–
–
2
[10]
+0.3V
Max
V
0.4
0.6
0.8
+1
+1
25
22
22
–
4
CC
Page 4 of 17
2.20 V to
3.60 V
V
CC
Unit
mA
A
A
A
A
V
V
V
V
[9]
