M27C801-100F1 STMicroelectronics, M27C801-100F1 Datasheet - Page 7
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M27C801-100F1
Manufacturer Part Number
M27C801-100F1
Description
IC EPROM 8MBIT 100NS 32CDIP
Manufacturer
STMicroelectronics
Specifications of M27C801-100F1
Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
8M (1M x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA
Current, Operating
35 mA
Current, Output, Leakage
±10
Current, Supply
35 mA (Max.)
Density
8M
Organization
1M×8
Package Type
FDIP32W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
100 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V
Voltage, Input, Low Level
0.80 V (Max.)
Voltage, Output, High
3.6 V (TTL), 4.3 V (CMOS)
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V
Access Time
45ns
Low Power Consumption
- Active current 35mA at 5 MHz - Standby current 100 μA
Programming Voltage
12.75 V ± 0.25 V
Supply Voltage Range
4.5V To 5V
Memory Case Style
DIP
No. Of Pins
32
Operating Temperature Range
0°C To +70°C
Ic Interface Type
Parallel
Supply Voltage Max
5V
Rohs Compliant
Yes
Operating Temperature Max
70°C
Memory Configuration
1M X 8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1688-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M27C801-100F1
Manufacturer:
AIC
Quantity:
63 000
Company:
Part Number:
M27C801-100F1
Manufacturer:
ST
Quantity:
6 100
Company:
Part Number:
M27C801-100F1
Manufacturer:
ST
Quantity:
6 100
Part Number:
M27C801-100F1
Manufacturer:
ST
Quantity:
20 000
Part Number:
M27C801-100F1M
Manufacturer:
ST
Quantity:
20 000
DC and AC characteristics
Table 9.
1. T
2. V
3. Speed obtained with High Speed AC measurement conditions.
4. Sampled only, not 100% tested.
Figure 7.
16/24
Symbol Alt
t
t
GHQZ
EHQZ
t
t
t
t
GLQV
AXQX
AVQV
ELQV
A
CC
(4)
(4)
= 0 to 70 °C or –40 to 85 °C; V
must be applied simultaneously with or before V
t
ACC
t
t
t
t
t
OH
CE
OE
DF
DF
Q0-Q7
A0-A19
E
G
Read mode AC characteristics
Read mode AC waveforms
Address valid to output valid
Chip Enable low to output valid
Output Enable low to output valid
Chip Enable high to output Hi-Z
Output Enable high to output Hi-Z
Address transition to output
transition
Parameter
CC
= 5 V ± 10%.
tAVQV
tELQV
tGLQV
VALID
(1) (2)
PP
GV
GV
GV
GV
condition
and removed simultaneously or after V
E = V
E = V
E = V
E = V
PP
PP
PP
PP
Test
= V
= V
= V
= V
IL
IL
IL
IL
,
,
IL
IL
IL
IL
Min.
0
0
0
-55
tAXQX
(3)
Max.
55
55
30
25
25
tEHQZ
tGHQZ
Min.
VALID
0
0
0
-80/-90
PP
Max.
80
80
40
35
35
.
Min
AI01583B
0
0
0
-100
Hi-Z
Max.
100
100
50
40
40
M27C801
Unit
ns
ns
ns
ns
ns
ns