M27C1001-12F1 STMicroelectronics, M27C1001-12F1 Datasheet - Page 7

• Manufacturer Part Number: M27C1001-12F1
• Description: IC EPROM 1MBIT 120NS 32CDIP
• Manufacturer: STMicroelectronics

Specifications of M27C1001-12F1

• Format - Memory: EPROMs
• Memory Type: UV EPROM
• Memory Size: 1M (128K x 8)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-CDIP (0.600", 15.24mm) Window
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA (Read)
• Current, Operating: 30 mA (Read)
• Current, Output, Leakage: ±10 μA (Read)
• Current, Supply: 30 mA
• Density: 1M
• Organization: 128K×8
• Package Type: FDIP32W
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 120 ns
• Time, Fall: ≤20 ns
• Time, Programmable: 100 μs
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V (Read)
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V (Read)
• Voltage, Input, Low Level: -0.3 V (Max.)
• Voltage, Output, High: 4.3 V (Read)
• Voltage, Output, Low: 0.4 V (Read)
• Voltage, Programmable: 11.5 V (Min.)
• Voltage, Supply: 5 V
• Memory Configuration: 128K X 8
• Access Time: 120ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: DIP
• No. Of Pins: 32
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1631-5

Table 9. Programming Mode DC Characteristics
(T
Note: 1. V
Table 10. Programming Mode AC Characteristics
(T
Note: 1. V
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C1001 are in the '1'
state. Data is introduced by selectively program-
ming '0's into the desired bit locations. Although
only '0's will be programmed, both '1's and '0's can
be present in the data word. The only way to
change a '0' to a '1' is by die exposition to ultravio-
A
A
t
Symbol
GHQZ
Symbol
t
t
t
t
t
t
t
VPHPL
VCHPL
t
t
t
= 25 °C; V
= 25 °C; V
PHQX
QXGL
GLQV
GHAX
QVPL
AVPL
PLPH
ELPL
V
V
2. Sampled only, not 100% tested.
I
V
V
I
V
I
CC
PP
OH
LI
OL
IH
ID
IL
(2)
CC
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
CC
CC
t
t
t
t
t
t
t
t
Alt
t
t
VPS
VCS
CES
OES
DFP
t
PW
DS
DH
OE
AH
AS
= 6.25V ± 0.25V; V
= 6.25V ± 0.25V; V
Address Valid to Program Low
Input Valid to Program Low
V
V
Chip Enable Low to Program Low
Program Pulse Width
Program High to Input Transition
Input Transition to Output Enable Low
Output Enable Low to Output Valid
Output Enable High to Output Hi-Z
Output Enable High to Address
Transition
PP
CC
Parameter
High to Program Low
High to Program Low
Parameter
PP
PP
= 12.75V ± 0.25V)
= 12.75V ± 0.25V)
PP
PP
and removed simultaneously or after V
and removed simultaneously or after V
Test Condition
V
I
OH
I
IL
OL
(1)
(1)
E = V
= –400µA
= 2.1mA
let light (UV EPROM). The M27C1001 is in the
programming mode when V
E is at V
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. V
be 6.25V ± 0.25V.
V
IN
IL
V
Test Condition
IH
IL
and P is pulsed to V
–0.3
11.5
Min
2.4
2
PP
PP
.
.
Min
95
2
2
2
2
2
2
2
0
0
V
PP
CC
12.5
Max
±10
0.8
0.4
50
50
+ 0.5
input is at 12.75V,
IL
CC
. The data to be
Max
105
100
130
is specified to
M27C1001
Unit
mA
mA
µA
V
V
V
V
V
Unit
µs
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
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