CY7C1041DV33-10ZSXI Cypress Semiconductor Corp, CY7C1041DV33-10ZSXI Datasheet - Page 15

• Manufacturer Part Number: CY7C1041DV33-10ZSXI
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1041DV33-10ZSXI

• Memory Size: 4M (256K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 90mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1921; CY7C1041DV33-10ZSXI

Acronyms
Document Number: 38-05473 Rev. *I
CE
CMOS
I/O
OE
SRAM
SOJ
TSOP
VFBGA
Acronym
chip enable
Complementary metal oxide semiconductor
Input/output
output enable
Static random access memory
Small Outline J-Lead
Thin Small Outline Package
Very Fine-Pitch Ball Grid Array
Description
Document Conventions
Units of Measure
ns
V
µA
mA
mV
mW
MHz
pF
°C
W
Symbol
nano seconds
Volts
micro Amperes
milli Amperes
milli Volts
milli Watts
Mega Hertz
pico Farad
degree Celcius
Watts
Unit of Measure
CY7C1041DV33
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