M27C256B-12F6 STMicroelectronics, M27C256B-12F6 Datasheet - Page 14

IC EPROM 256KBIT 120NS 28CDIP

M27C256B-12F6

Manufacturer Part Number
M27C256B-12F6
Description
IC EPROM 256KBIT 120NS 28CDIP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M27C256B-12F6

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
256K (32K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
256K
Organization
32K×8
Package Type
FDIP28W
Temperature, Operating
-40 to +85 °C
Temperature, Operating, Maximum
85 °C
Temperature, Operating, Minimum
-40 °C
Time, Access
120 ns
Time, Fall
≤20 ns
Time, Programmable
100 μA
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
0.8 V (Typ.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
12.75 V ± 0.25 V
Voltage, Supply
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1647-5

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DC and AC parameters
14/24
Figure 6.
Table 6.
1. Sampled only, not 100% tested.
2.
Table 7.
1. T
2. V
3. Maximum DC voltage on Output is V
Symbol
Symbol
V
I
I
V
V
C
I
I
CC1
CC2
I
V
IH
I
LO
CC
PP
C
(T
OH
OL
LI
OUT
A
IL
CC
(3)
IN
A
= 0 to 70°C, –40 to 85°C, –40 to 105°C or –40 to 125°C; V
= 25 °C, f = 1 MHz)
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby)
CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
Input Capacitance
Output Capacitance
AC testing load circuit
Capacitance
Read mode DC characteristics
Parameter
Parameter
C L = 30pF for High Speed
C L = 100pF for Standard
C L includes JIG capacitance
(1) (2)
DEVICE
UNDER
TEST
CC
+0.5V.
I
OUT
1.3V
E = V
Test Condition
0V V
E > V
I
0V V
PP
(1) (2)
OH
I
= 0mA, f = 5MHz
I
OL
V
OH
Test Condition
PP
E = V
and removed simultaneously or after V
1N914
3.3k
= –100µA
IL
= 2.1mA
CC
C L
= –1mA
OUT
V
, G = V
V
IN
= V
OUT
IN
– 0.2V
CC
IH
V
CC
= 0V
V
CC
= 0V
= 5V ± 5% or 5V ± 10%; V
CC
IL
,
OUT
AI01823B
V
CC
Min
–0.3
Min
3.6
– 0.7V
2
Max
PP
V
12
6
CC
Max
±10
±10
100
100
0.8
0.4
= V
30
PP
1
M27C256B
+ 1
.
CC
.
Unit
pF
pF
Unit
mA
mA
µA
µA
µA
µA
V
V
V
V
V

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