M29W640GH70NB6E NUMONYX, M29W640GH70NB6E Datasheet - Page 36

• Manufacturer Part Number: M29W640GH70NB6E
• Description: IC FLASH 64MBIT 70NS 56TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W640GH70NB6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 12.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. This time does not include the pre-programming time.
5. Block erase polling cycle time (see
6. Maximum value measured at worst case conditions for both temperature and V
7. Program polling cycle time (see
36/90
Chip Erase
Block Erase (64 Kbytes)
Erase Suspend Latency Time
Program (byte or word)
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Single Byte and Word Program
32-byte/16-word Program using Write to Buffer and Program
32-byte/16-word Program using Write to Buffer and Program
(V
Chip Program (byte by byte)
Chip Program (word by word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency Time
Program/Erase Cycles (per block)
Data Retention
PP
/WP = 12 V)
Program, erase times and endurance cycles
(4)(5)
Parameter
(7)
Figure
Figure
6,
Figure 7
19).
and
Figure
19).
Symbol
t
t
WHWH2
WHWH1
CC
CC
100,000
.
Min
after 100,000 program/erase cycles.
20
Typ
180
0.5
10
40
80
10
10
10
10
45
80
20
10
(1)(2)
Max
400
200
200
200
200
400
200
100
50
50
4
(6)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
s
s
s
s
s
s