NAND128W3A2BN6E NUMONYX, NAND128W3A2BN6E Datasheet - Page 34

• Manufacturer Part Number: NAND128W3A2BN6E
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND128W3A2BN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Access Time: 12µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 497-5037; 497-5037

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 18. DC Characteristics, 1.8V Devices
34/56
Symbol
I
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
V
E=V
V
Test Conditions
OUT
IN
t
RLRL
I
I
OH
E=V
= 0 to V
WP=0/V
OL
V
IL,
= 0 to V
OL
I
= -100µA
= 100µA
OUT
minimum
DD
= 0.1V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
V
V
DD
DD
Min
-0.3
3
-
-
-
-
-
-
-
-
-
-0.4
-0.1
Typ
10
20
8
8
8
4
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.4
0.1
1.5
15
15
15
50
-
+0.3
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V