NAND128W3A2BN6E NUMONYX, NAND128W3A2BN6E Datasheet - Page 22

IC FLASH 128MBIT 48TSOP

NAND128W3A2BN6E

Manufacturer Part Number
NAND128W3A2BN6E
Description
IC FLASH 128MBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND128W3A2BN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
128M (16M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Access Time
12µs
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Voltage, Vcc
3.3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
497-5037
497-5037

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Command set
5
22/59
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 9.
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or
2. Any undefined command sequence is ignored by the device.
Read A
Read B
Read C
Read Electronic Signature
Read Status Register
Page Program
Copy Back Program
Block Erase
Reset
input/output data are not shown.
Command
Commands
1
st
01h
FFh
00h
50h
90h
70h
80h
00h
60h
cycle
Table
(2)
Bus write operations
9.
2
nd
D0h
8Ah
10h
cycle
(1)(2)
3
rd
10h
cycle
NAND128-A, NAND256-A
Command accepted
during busy
Yes
Yes

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