CY7C1021D-10ZSXI Cypress Semiconductor Corp, CY7C1021D-10ZSXI Datasheet - Page 4

• Manufacturer Part Number: CY7C1021D-10ZSXI
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021D-10ZSXI

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 80 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Density: 1Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 16b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 80mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1972; CY7C1021D-10ZSXI

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on
V
DC Voltage Applied to Outputs
in High Z State
Electrical Characteristics
Over the Operating Range
Document #: 38-05462 Rev. *J
V
V
V
V
I
I
I
I
I
Note
IX
OZ
CC
SB1
SB2
Parameter
2. V
CC
OH
OL
IH
IL
to Relative GND
IL
(min) = –2.0 V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Automatic CE Power Down
Current —TTL Inputs
Automatic CE Power Down
Current —CMOS Inputs
[2]
CC
................................ –0.5 V to V
Operating Supply Current
[2]
IH
(max) = V
................................–0.5 V to +6.0 V
Description
CC
+ 1 V for pulse durations of less than 5 ns.
[2]
I
I
GND < V
GND < V
V
f = f
Max V
Max V
V
OH
OL
CC
IN
CC
= 8.0 mA
= –4.0 mA
max
< 0.3 V, f = 0
= Max, I
+ 0.5 V
CC
CC
= 1/t
, CE > V
, CE > V
I
I
< V
< V
RC
OUT
CC
CC
Test Conditions
, Output Disabled
IH
CC
= 0 mA,
, V
DC Input Voltage
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Industrial
– 0.3 V, V
IN
Range
> V
IH
or V
IN
> V
IN
–40 C to +85 C
CC
< V
Temperature
[2]
Ambient
– 0.3 V, or
100 MHz
IL
83 MHz
66 MHz
40 MHz
............................ –0.5 V to V
, f = f
max
0.5
Min
2.4
2.2
-10 (Industrial)
1
1
–
–
–
–
–
–
–
5 V  10%
V
CC
CY7C1021D
V
CC
Max
0.4
0.8
+1
+1
80
72
58
37
10
+ 0.5 V
–
3
CC
Page 4 of 16
Speed
10 ns
+ 0.5 V
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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