CY7C1021DV33-10BVXI Cypress Semiconductor Corp, CY7C1021DV33-10BVXI Datasheet - Page 3
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CY7C1021DV33-10BVXI
Manufacturer Part Number
CY7C1021DV33-10BVXI
Description
IC SRAM 1MBIT 10NS 48VFBGA
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY7C1021DV33-10VXI.pdf
(13 pages)
Specifications of CY7C1021DV33-10BVXI
Memory Size
1M (64K x 16)
Package / Case
48-VFBGA
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
60 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Memory Configuration
64K X 16
Supply Voltage Range
3V To 3.6V
Memory Case Style
FBGA
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2006
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1021DV33-10BVXI
Manufacturer:
CYPRESS
Quantity:
11 886
Company:
Part Number:
CY7C1021DV33-10BVXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1021DV33-10BVXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY7C1021DV33-10BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05460 Rev. *F
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
DC Electrical Characteristics
Capacitance
Thermal Resistance
Notes
Parameter
V
V
V
V
I
I
I
I
I
C
C
4. V
5. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IN
OUT
JA
JC
Parameter
Parameter
IL
(min.) = –2.0V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Supply Current
Automatic CE Power-Down
Current —TTL Inputs
Automatic CE Power-Down
Current —CMOS Inputs
CC
[4]
[5]
[4]
......................................–0.3V to V
Operating
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
...................................–0.3V to V
Description
CC
IH
(max) = V
to Relative GND
Description
Description
[5]
CC
[4]
+ 1V for pulse durations of less than 5 ns.
Over the Operating Range
[4]
V
V
GND < V
GND < V
V
I
f = f
Max. V
V
Max. V
V
OUT
CC
CC
CC
IN
IN
.... –0.3V to +4.6V
MAX
> V
> V
= Min., I
= Min., I
= Max.,
T
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
= 0 mA,
A
CC
CC
CC
IH
= 25C, f = 1 MHz, V
= 1/t
Test Conditions
I
I
, CE > V
, CE > V
or V
– 0.3V or V
< V
< V
CC
CC
OH
OL
RC
CC
CC
IN
+0.3V
+0.3V
= 8.0 mA
, Output Disabled
= –4.0 mA
< V
IH
CC
Test Conditions
Test Conditions
IL
IN
, f = f
– 0.3V,
< 0.3V, f = 0
100 MHz
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Automotive-A
Automotive-E –40 C to +125 C
83 MHz
66 MHz
40 MHz
MAX
CC
Industrial
= 3.3V
Range
–10 (Ind’l/Auto-A)
Min.
0.3
2.4
2.0
1
1
–40 C to +85 C
–40 C to +85 C
Temperature
Ambient
V
CC
Max.
0.4
0.8
+1
+1
60
55
45
30
10
3
+ 0.3
59.52
36.75
SOJ
Max.
CY7C1021DV33
8
8
TSOP II VFBGA
Min.
0.3
53.91
21.24
2.4
2.0
5
5
–12 (Auto-E)
3.3V 0.3V
V
CC
V
CC
36
Max.
9
100
0.4
0.8
+5
+5
Page 3 of 13
90
60
50
15
-
+ 0.3
Unit
pF
pF
Speed
10 ns
10 ns
12 ns
C/W
C/W
Unit
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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