M28W160ECT70ZB6E NUMONYX, M28W160ECT70ZB6E Datasheet - Page 5

• Manufacturer Part Number: M28W160ECT70ZB6E
• Description: IC FLASH 16MBIT 70NS 46TFBGA
• Manufacturer: NUMONYX

Specifications of M28W160ECT70ZB6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 46-TFBGA
• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 20b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 1M
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 46
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUMMARY DESCRIPTION
The M28W160EC is a 16 Mbit (1 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at the block level and programmed in-system
on a Word-by-Word basis. These operations can
be performed using a single low voltage (2.7 to
3.6V) supply. V
down to 1.65V. An optional 12V V
is provided to speed up customer programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W160EC has an array of 39
blocks: 8 Parameter Blocks of 4 KWord and 31
Main Blocks of 32 KWord. M28W160ECT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W160ECB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in
dresses.
The M28W160EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When V
program or erase. All blocks are locked at power-
up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
PP
V
PPLK
DDQ
all blocks are protected against
allows to drive the I/O pin
Figure 5., Block Ad-
PP
power supply
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system design. The Protection Register is divid-
ed into two 64 bit segments, the first one contains
a unique device number written by Numonyx,
while the second one is one-time-programmable
by the user. The user programmable segment can
be permanently protected. The Security Block, pa-
rameter block 0, can be permanently protected by
the user.
Protection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (10 X 20mm)
and TFBGA46 (6.39 x 6.37mm, 0.75mm pitch)
packages.
In order to meet environmental requirements, Nu-
monyx also offers the M28W160ECT and the
M28W160ECB in ECOPACK
PACK packages are Lead-free. The category of
second Level Interconnect is marked on the pack-
age and on the inner box label, in compliance with
JEDEC Standard JESD97. The maximum ratings
related to soldering conditions are also marked on
the inner box label.
The memories are supplied with all the bits erased
(set to ’1’).
Figure
M28W160ECT, M28W160ECB
6., shows the Security Block and
®
packages. ECO-
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