M25P16-VME6G NUMONYX, M25P16-VME6G Datasheet - Page 40
![IC FLASH 16MBIT 75MHZ 8VDFPN](/photos/7/23/72370/m25p16-vme6g_sml.jpg)
M25P16-VME6G
Manufacturer Part Number
M25P16-VME6G
Description
IC FLASH 16MBIT 75MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Specifications of M25P16-VME6G
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
VDFPN
No. Of Pins
8
Base Number
25
Frequency
75MHz
Ic Generic
RoHS Compliant
Memory Configuration
2M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P16-VME6G
Manufacturer:
MICRON
Quantity:
20 000
40/59
Table 15.
1. Typical values given for T
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
6. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
7. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4, int(15.3) =16.
Symbol Alt.
t
PP
t
t
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
SE
BE
CH
(6)
+ t
CL
must be greater than or equal to 1/ f
AC characteristics (
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes, where n = 1
to 4)
Page Program cycle time (n bytes, where n = 5
to 256)
Sector Erase cycle time
Bulk Erase cycle time
Applies only to products made with 110 nm technology
Test conditions specified in
A
= 25 °C.
Parameter
110 nm technology
C
.
Table 10
) (continued)
—
—
—
—
—
and
Min
Table 12
int(n/8) × 0.02
Typ
0.64
0.01
0.6
13
(1)
(7)
Max
40
5
3
Unit
ms
s
s