M24C64-RMN6TP STMicroelectronics, M24C64-RMN6TP Datasheet - Page 27

IC EEPROM 64KBIT 400KHZ 8SOIC

M24C64-RMN6TP

Manufacturer Part Number
M24C64-RMN6TP
Description
IC EEPROM 64KBIT 400KHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24C64-RMN6TP

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Organization
8 K x 8
Interface Type
I2C
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
0.8 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8648-2
M24C64-RMN6TP

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M24C64-DF, M24C64-W, M24C64-R, M24C64-F
Table 13.
1. Characterized value, not tested in production.
2. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
I
CC0
CC1
V
completion of the internal write cycle t
I
CC
LO
LI
OL
IH
IL
Input leakage current
(SCL, SDA, E2, E1,
E0)
Output leakage
current
Supply current (Read) f
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24xxx-W - device grade 3)
Parameter
Doc ID 16891 Rev 23
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
Device not selected
V
I
I
Test conditions (in addition to those
OL
OL
c
IN
CC
W
= 400 kHz
= 2.1 mA, V
= 3 mA, V
= V
(t
W
in
SS
W
is triggered by the correct decoding of a Write instruction).
Table 7
or V
SS
or V
CC
CC
CC
= 5.5 V
CC
and
= 2.5 V or
(2)
, V
Table
IN
= V
10)
SS
or
DC and AC parameters
0.7V
0.7V
–0.45
Min.
CC
CC
V
0.3V
CC
Max.
5
± 2
± 2
6.5
0.4
10
2
(1)
+0.6
CC
V
27/44
Unit
mA
mA
µA
µA
µA
V
V
V

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