M24C64-WMN6TP STMicroelectronics, M24C64-WMN6TP Datasheet - Page 28

IC EEPROM 64KBIT 400KHZ 8SOIC

M24C64-WMN6TP

Manufacturer Part Number
M24C64-WMN6TP
Description
IC EEPROM 64KBIT 400KHZ 8SOIC
Manufacturer
STMicroelectronics
Datasheets

Specifications of M24C64-WMN6TP

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Density
64Kb
Interface Type
Serial (I2C)
Organization
8Kx8
Access Time (max)
900ns
Frequency (max)
400KHz
Write Protection
Yes
Data Retention
40Year
Operating Supply Voltage (typ)
3.3/5V
Package Type
SOIC
Operating Temp Range
-40C to 85C
Supply Current
5mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.5 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
3.3 V, 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8650-2
M24C64-WMN6TP
Q2040217A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24C64-WMN6TP
Manufacturer:
STMicroelectronics
Quantity:
20 000
Part Number:
M24C64-WMN6TP
Manufacturer:
ST
Quantity:
1 032
Part Number:
M24C64-WMN6TP
Manufacturer:
ST
Quantity:
1 614
Part Number:
M24C64-WMN6TP
Manufacturer:
ST
Quantity:
1 989
Part Number:
M24C64-WMN6TP
Manufacturer:
STM
Quantity:
2 000
Part Number:
M24C64-WMN6TP
Manufacturer:
ST
Quantity:
2 394
Part Number:
M24C64-WMN6TP
Manufacturer:
ST
Quantity:
220
Part Number:
M24C64-WMN6TP
Manufacturer:
ST
Quantity:
20 000
Part Number:
M24C64-WMN6TP
0
Company:
Part Number:
M24C64-WMN6TP
Quantity:
2 500
Company:
Part Number:
M24C64-WMN6TP
Quantity:
505
DC and AC parameters
28/44
Table 14.
1. If the application uses the voltage range R device with 2.5 V < V
2. Only for devices operating at f
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
LO
CC
OL
LI
IH
IL
Input leakage current
(E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24xxx-R - device grade 6)
Table 12
Parameter
instead of this table.
C
max = 1 MHz (see
Doc ID 16891 Rev 23
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
Device not selected
V
1.8 V ≤ V
1.8 V ≤ V
1.8 V ≤ V
I
Test conditions
c
OL
(t
IN
CC
IN
= 1 MHz
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
to those in
= 1.8 V, f
SS
SS
W
M24C64-DF, M24C64-W, M24C64-R, M24C64-F
CC
CC
CC
, 1.8 V < V
(2)
or V
or V
Table
Table
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
17).
Table 8
, V
= 1.8 V
(1)
10)
SS
CC
(in addition
CC
(4)
or V
cc
,
= 1.8 V
< 2.5 V
< 5.5 V and -40 °C < TA < +85 °C,
and
CC
0.75V
0.75V
–0.45
Min.
CC
CC
0.25 V
V
CC
Max.
3
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
V
V
V
V

Related parts for M24C64-WMN6TP