M93C66-RMB6TG STMicroelectronics, M93C66-RMB6TG Datasheet - Page 15

IC EEPROM 4KBIT 1MHZ 8UFDFPN

M93C66-RMB6TG

Manufacturer Part Number
M93C66-RMB6TG
Description
IC EEPROM 4KBIT 1MHZ 8UFDFPN
Manufacturer
STMicroelectronics
Datasheets

Specifications of M93C66-RMB6TG

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
4K (512 x 8 or 256 x 16)
Speed
1MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-MLP, 8-UFDFPN
Memory Configuration
512 X 8, 256 X 16
Interface Type
Serial, Microwire
Clock Frequency
2MHz
Supply Voltage Range
1.8V To 5.5V
Memory Case Style
DFN
No. Of Pins
8
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8708-2
M93C66-RMB6TG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M93C66-RMB6TG
Manufacturer:
ST
0
M93C86, M93C76, M93C66, M93C56, M93C46
5.3
Figure 4.
1. For the meanings of An, Xn, Qn and Dn, see
Erase Byte or Word
The Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or
word) to 1. Once the address has been correctly decoded, the falling edge of the Chip
Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be
detected by monitoring the READY/BUSY line, as described in the
section.
Read
Write
Write
Enable
READ, WRITE, WEN, WDS sequences
S
Q
S
S
Q
D
D
D
1 0
1
1 1 0 An
CODE
CODE
CODE
OP
0
OP
OP
1
0
1
An
1
ADDR
ADDR
Doc ID 4997 Rev 11
Xn X0
A0
A0
Qn
Dn
Table
5.,
DATA OUT
DATA IN
Table 6.
Write
Disable
and
Table
S
D
D0
Q0
7..
BUSY
READY/BUSY status
1
CODE
STATUS
CHECK
0
OP
0
0
0
READY
Xn X0
Instructions
AI00878d
15/36

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