MT48LC32M16A2P-75 IT:C TR Micron Technology Inc, MT48LC32M16A2P-75 IT:C TR Datasheet - Page 56

IC SDRAM 512MBIT 133MHZ 54TSOP

MT48LC32M16A2P-75 IT:C TR

Manufacturer Part Number
MT48LC32M16A2P-75 IT:C TR
Description
IC SDRAM 512MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC32M16A2P-75 IT:C TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (32Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-TSOP II
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
115mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1077-2
Figure 40:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
DQML, DQMH
COMMAND
BA0, BA1
A11, A12
A0–A9,
DQM/
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Single READ – Without Auto Precharge
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 1, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
t AC
56
T4
D
NOP
OUT
t OH
t HZ
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANKS
PRECHARGE
ALL BANKS
BANK(S)
T5
t RP
T6
NOP
512Mb: x4, x8, x16 SDRAM
©2000 Micron Technology, Inc. All rights reserved.
ACTIVE
BANK
ROW
T7
ROW
Timing Diagrams
T8
NOP
Don’t Care
Undefined

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