MT29F16G08DAAWP-ET:A TR Micron Technology Inc, MT29F16G08DAAWP-ET:A TR Datasheet - Page 48
![IC FLASH 16GBIT 48TSOP](/photos/7/22/72295/557-48-tsop_sml.jpg)
MT29F16G08DAAWP-ET:A TR
Manufacturer Part Number
MT29F16G08DAAWP-ET:A TR
Description
IC FLASH 16GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F16G08DAAWP-ETA_TR.pdf
(81 pages)
Specifications of MT29F16G08DAAWP-ET:A TR
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
16G (2G x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
557-1413-2
- Current page: 48 of 81
- Download datasheet (3Mb)
Figure 36:
Interleaved PROGRAM PAGE CACHE MODE Operations
Figure 37:
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__2.fm - Rev. B 2/07 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
80h
80h
Address
Address
Interleaved PROGRAM PAGE Operation with Status Register Monitoring
Interleaved PROGRAM PAGE CACHE MODE Operation with R/B# Monitoring
Die 1
Die 1
Data
Data
10h
15h
Figures 37 and 38 show how to perform two types of interleaved PROGRAM PAGE
CACHE MODE operations. In Figure 37, the R/B# signal is monitored. In Figure 38 on
page 49, the status register is monitored with the TWO-PLANE/MULTIPLE-DIE READ
STATUS (78h) command.
RANDOM DATA INPUT (85h) is permitted during interleaved PROGRAM PAGE CACHE
MODE operations.
80h
80h
Address
Address
Die 2
Die 2
Data
Data
10h
15h
48
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
78h
Address
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Die 1
80h
Address
Die 1
Status
Data
80h
15h
Command Definitions
Address
Die 1
©2006 Micron Technology, Inc. All rights reserved.
80h
Data
Address
Die 2
10h
Data
15h
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