MT48H32M16LFBF-75 IT:B TR Micron Technology Inc, MT48H32M16LFBF-75 IT:B TR Datasheet - Page 81
![IC SDRAM 512MBIT 133MHZ 54VBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48H32M16LFBF-75 IT:B TR
Manufacturer Part Number
MT48H32M16LFBF-75 IT:B TR
Description
IC SDRAM 512MBIT 133MHZ 54VBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H32M16LFBF-75 IT:B TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1389-2
- Current page: 81 of 86
- Download datasheet (3Mb)
Deep Power-Down
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
81
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Deep Power-Down
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