MT48LC16M16A2TG-7E IT:D TR Micron Technology Inc, MT48LC16M16A2TG-7E IT:D TR Datasheet - Page 33
MT48LC16M16A2TG-7E IT:D TR
Manufacturer Part Number
MT48LC16M16A2TG-7E IT:D TR
Description
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC16M16A2P-75D_TR.pdf
(92 pages)
Specifications of MT48LC16M16A2TG-7E IT:D TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1064-2
- Current page: 33 of 92
- Download datasheet (3Mb)
NO OPERATION (NOP)
LOAD MODE REGISTER (LMR)
ACTIVE
Figure 13: ACTIVE Command
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
The NO OPERATION (NOP) command is used to perform a NOP to the selected device
(CS# is LOW). This prevents unwanted commands from being registered during idle or
wait states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[n:0] (where An is the most significant ad-
dress term), BA0, and BA1(see Mode Register (page 46)). The LOAD MODE REGISTER
command can only be issued when all banks are idle and a subsequent executable com-
mand cannot be issued until
The ACTIVE command is used to activate a row in a particular bank for a subsequent
access. The value on the BA0, BA1 inputs selects the bank, and the address provided
selects the row. This row remains active for accesses until a PRECHARGE command is
issued to that bank. A PRECHARGE command must be issued before opening a differ-
ent row in the same bank.
BA0, BA1
Address
RAS#
CAS#
WE#
CKE
CLK
CS#
HIGH
Bank address
Row address
t
33
MRD is met.
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 SDRAM
© 1999 Micron Technology, Inc. All rights reserved.
Commands
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